×

Semiconductor chip having island dispersion structure and method for manufacturing the same

  • US 20070120255A1
  • Filed: 11/15/2006
  • Published: 05/31/2007
  • Est. Priority Date: 11/30/2005
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor chip including a semiconductor silicon substrate having a semiconductor device layer and a porous silicon domain layer, said semiconductor device layer being provided in a main surface region on one surface of the semiconductor silicon substrate, said porous silicon domain layer being provided in a main surface region on a back surface which is another surface of the semiconductor silicon substrate, and said porous silicon domain layer having porous silicon domains dispersed like islands in the back surface of the semiconductor silicon substrate.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×