Small volume thin film and high energy density crystal capacitors

• US 20070121274A1
• Filed: 07/12/2006
• Published: 05/31/2007
• Est. Priority Date: 07/12/2005
• Status: Abandoned Application

• Current Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Original Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Inventors: Partlow, Deborah, Clarke, Rowland, DeSalvo, Gregory, Kirschenbaum, Abigail, Talvacchio, John, Murduck, James
• Application Number:
  US11/484,597
• Publication Number:
  US 20070121274A1
• Time in Patent Office: Days
• US Class Current: 361/311
• CPC Class Codes: H01G 4/1218 based on titanium oxides or titanates H01G4/1245 takes precedence
• CPC Class Codes: H01G 4/1227 based on alkaline earth titanates
• CPC Class Codes: H01G 4/232 electrically connecting two or more layers of a stacked or rolled capacitor
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence
• CPC Class Codes: H01G 4/306 made by thin film techniques
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01G 4/38 Multiple capacitors, i.e. structural combinations of fixed capacitors
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: Y02T 10/70 Energy storage systems for electromobility, e.g. batteries

Abstract

Embodiments of the invention provide parallel plate capacitors comprising a bulk single crystal or single crystal film dielectric material disposed between the parallel plates and capacitors comprising one or more bulk single crystal or single crystal film dielectrics each disposed between two electrodes. Energy storage devices incorporating these capacitors also are disclosed.

Claims

1. A parallel plate capacitor which comprises a bulk single crystal or single crystal film dielectric.

4. The capacitor of claim 1, wherein said dielectric consists essentially of CaCu₃Ti₄O₁₂.

5. The capacitor of claim 1, wherein the dielectric consists essentially of Ca_1-xSr_xCu₃Ti₄O₁₂, where X is greater than or equal to 0 and less than or equal to 1.

6. The capacitor of claim 5, wherein X is greater than or equal to 0 and less than or equal to 0.2.

7. The capacitor of claim 5, wherein X is greater than or equal to 0 and less than or equal to 0.1.

8. The capacitor of claim 1, wherein the dielectric has a perovskite structure.

9. An energy storage device which comprises one or more capacitors according to claim 1.

10. A pulse-power system comprising a capacitor according to claim 1.

11. An electric vehicle comprising an energy storage system, wherein said energy storage system comprises a capacitor according to claim 1.

2. A capacitor, comprising:

a first electrode;

a second electrode; and

a bulk single crystal or single crystal film dielectric disposed between and contacting said first electrode and said second electrode.

3. A capacitor, comprising:

a first electrode;

a second electrode; and

a ceramic tape dielectric disposed between and contacting said first electrode and said second electrode.

12. The capacitor of claim 3, wherein the ceramic is a polycrystalline ceramic.

13. A capacitor energy storage device comprising at least one multilayer interleaved structure of thin-film dielectric and electrode layers, wherein said dielectric layers each are positioned between two electrode layers but protrude from between said electrode layers at one edge.

14. The capacitor energy storage device of claim 13 wherein said thin-film dielectric layer is a single crystal.

15. The capacitor energy storage device of claim 13 wherein said dielectric is CCTO.

16. The capacitor energy storage device of claim 15 wherein said CCTO is a polycrystalline thin-film.

17. The capacitor energy storage device of claim 15 wherein said CCTO is a single crystal.

18. The capacitor energy storage device of claim 13 wherein said conductor is selected from the group consisting of La_2-xSr_xCuO₄ and La_1-xSr_xCoO₄

19. The capacitor energy storage device of claim 13 which further comprises a substrate layer of having at least 2 opposite sides wherein said multilayered interleaved structure is positioned on one side of said layer.

20. The capacitor energy storage device of claim 19 wherein said substrate is LaAlO₃

21. The capacitor energy storage device of claim 19 wherein said multilayered interleaved structure is positioned on one side of said substrate layer and a second multilayered interleaved structure is positioned on the opposite side of said substrate layer.

22. The capacitor energy storage device of claim 13 further comprises a fuse.

23. The capacitor energy storage device of claim 13 which further comprises a capping layer placed over said multilayered interleaved structure, wherein said capping layer is a high-conductivity metal.

24. The capacitor energy storage device of claim 23 wherein said high-conductivity metal is selected from the group consisting of gold, silver and copper.

25. The capacitor energy storage device of claim 13 wherein at least two of said multilayer interleaved structures of thin-film dielectric and electrode layers are placed in parallel.

26. The capacitor energy storage device of claim 13 which is made using a mask.

27. A process of making the capacitor energy storage device of claim 13 using a mask.