Highly efficient gallium nitride based light emitting diodes via surface roughening
First Claim
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1. A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen fare (N-face) of the LED and a surface of the N-face is roughened.
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Abstract
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
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Citations
18 Claims
- 1. A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen fare (N-face) of the LED and a surface of the N-face is roughened.
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17. A method of creating a gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED, comprising:
roughening a surface of the N-face into one or more cones.
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18. A light emitting diode (LED) comprised of an n-type electrode, n-type layer, active region, p-type layer and p-type electrode, wherein a surface of the n-type layer is roughened by an anisotropic etching into one or more cones and light is extracted through the roughened surface of the n-type layer.
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