LOW DRIFT PLANAR WAVEGUIDE GRATING SENSOR AND METHOD FOR MANUFACTURING SAME
First Claim
1. A planar waveguide grating (PWG) sensor comprising a silicon rich silicon nitride surface layer which has at least one of the following:
- (1) a composition which includes at least Si and N where a Si/N atomic ratio is greater than 0.75; and
(2) a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation.
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Accused Products
Abstract
A planar waveguide grating (PWG) sensor is described herein which exhibits a low signal drift and an enhanced sensitivity due to the use of a fully dense silicon-rich nitride surface layer. In the preferred embodiment, the silicon rich silicon nitride surface layer has a composition which includes Si and N, and optionally H, Ge and/or O, where a Si/N atomic ratio is greater than 0.75. In addition, the silicon rich nitride surface layer has a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation. A method is also described herein for manufacturing the PWG sensor with acceptable costs and high yields by utilizing well known semiconductor processes and tools.
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Citations
23 Claims
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1. A planar waveguide grating (PWG) sensor comprising a silicon rich silicon nitride surface layer which has at least one of the following:
- (1) a composition which includes at least Si and N where a Si/N atomic ratio is greater than 0.75; and
(2) a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- (1) a composition which includes at least Si and N where a Si/N atomic ratio is greater than 0.75; and
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13. A microplate comprising:
a frame including a plurality of wells formed therein, each well incorporating a planar waveguide grating (PWG) sensor that includes;
a silicon rich silicon nitride surface layer which has at least one of the following;
(1) a composition which includes at least Si and N where a Si/N atomic ratio is greater than 0.75; and
(2) a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation.- View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method for producing a planar waveguide grating (PWG) sensor, said method comprising the steps of:
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providing a substrate;
depositing, onto said substrate, a cladding layer;
forming, in said cladding layer, a surface grating structure;
depositing, onto said cladding layer and said surface grating structure, a waveguide layer which has a thickness sufficient to form a monomode waveguide; and
forming, onto said waveguide layer, a silicon rich silicon nitride surface layer which has at least one of the following;
(1) a composition which includes at least Si and N where a Si/N atomic ratio is greater than 0.75; and
(2) a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation. - View Dependent Claims (21)
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22. A method for producing a PWG sensor, said method comprising the steps of:
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providing a substrate;
depositing, onto said substrate, a cladding layer;
forming, in said cladding layer, a surface grating structure;
depositing, onto said cladding layer and said surface grating structure, a silicon rich silicon nitride surface layer which has a thickness sufficient to form a monomode waveguide and which also has at least one of the following;
(1) a composition which includes at least Si and N where a Si/N atomic ratio is greater than 0.75; and
(2) a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation. - View Dependent Claims (23)
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Specification