Method of nanopatterning, a resist film for use therein, and an article including the resist film

• US 20070122749A1
• Filed: 11/30/2005
• Published: 05/31/2007
• Est. Priority Date: 11/30/2005
• Status: Abandoned Application

• Current Assignee: Dow, Inc.
• Original Assignee: Dow, Inc.
• Inventors: Guo, Lingjie, Fu, Peng
• Application Number:
  US11/290,866
• Publication Number:
  US 20070122749A1
• Time in Patent Office: Days
• US Class Current: 430/311
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/0757 Macromolecular compounds containing Si-O, Si-C or Si-N bonds G03F7/0752 takes precedence

Abstract

A method of nanopatterning includes the steps of providing a resist film (12) and forming a pattern in the resist film (12). The resist film (12) includes a copolymer consisting of an organosilicone component and an organic component. An article (10) includes a substrate (14) and the resist film (12) disposed on the substrate (14). The copolymer of the organosilicone component and the organic component is sufficiently elastic, due to the presence of the organosilicone component, to be capable of resisting fracture and delamination during mold release. Furthermore, during pattern formation, the copolymer develops relatively low surface energy at an interface with the surface of a mold, as compared to conventional polymeric materials, and preferentially adheres to the substrate (14) rather than the mold, which provides for relatively easy mold release. The presence of the organosilicone component in the copolymer also allows the resist film (12) to exhibit excellent resistance to oxygen plasma etching.

Claims

1. A method of nanopatterning comprising the steps of;

providing a resist film (12) comprising a copolymer of an organosilicone component and an organic component, and

forming a pattern in the resist film (12).

2. A method as set forth in claim 1 wherein the organosilicone component comprises a silicone group selected from the group of an (SiR₂O) group, an (SiRO_2/3) group, and combinations thereof, wherein R is selected from the group of an amino group, a hydroxyl group, an ether group, a carboxyl group, hydrogen, a phenyl group, a hydrocarbon group, a fluorocarbon group, and combinations thereof.

3. A method as set forth in claim 2 wherein the organosilicone component comprises a dialkyl silane.

4. A method as set forth in claim 1 wherein the organic component is selected from the group of acrylates, styrenes, cyclic olefins, and combinations thereof.

5. A method as set forth in claim 1 wherein the copolymer is further defined as at least one of polystyrene-poly(dimethyl siloxane) block copolymer, poly(dimethyl siloxane)-methyl mathacrylate (MMA) graft copolymer, poly(dimethyl siloxane)-methyl acrylate graft copolymer, poly(dimethyl siloxane)-ethyl acrylate graft copolymer, methyl acrylate-isobornyl acrylate-poly(dimethyl siloxane) graft copolymer, polystyrene-poly(dimethyl siloxane) graft copolymer, poly(cyclic olefin)-poly(dimethyl siloxane) graft copolymer, polysiloxane-poly(ester) copolymer, polysiloxane-polyamide copolymer, polysiloxane-polyimide copolymer, polysiloxane-polyurethane copolymer, polysiloxane-polysulfone copolymer, polysiloxane-polyether copolymer, and polysiloxane-polycarbonate copolymer.

6. A method as set forth in claim 1 wherein a molar ratio of the organosilicone component to the organic component in the copolymer is from 1:

10 to 5;

1.

7. A method as set forth in claim 1 wherein the step of forming the pattern in the resist film (12) comprises at least one of nanoimprint lithography (NIL), thermal embossing, nanoscale contact printing, UV-assisted nanoimprint lithography, Step-and-Flash Nanoimprint Lithography (S-FIL), and combined-nanoimprint-and-photolithography.

8. A method as set forth in claim 1 further comprising the step of applying the copolymer to a substrate (14) to form the resist film (12).

9. A method as set forth in claim 8 wherein the copolymer is applied through at least one of spin-coating, dip-coating, spray-coating, and applying the copolymer onto the substrate (14) as liquid droplets.

10. A method as set forth in claim 1 further comprising the step of forming a planarizing film (16) on a substrate (14).

11. A method as set forth in claim 10 wherein the step of providing the resist film (12) comprises applying the copolymer onto the planarizing film (16) to form the resist film (12).

12. A method as set forth in claim 11 further comprising the step of plasma etching residual copolymer from the pattern in the resist film (12) to expose the planarizing film (16).

13. A method as set forth in claim 11 further comprising the step of oxygen plasma etching the planarizing film (16) to form a pattern in the planarizing film (16).

14. A method as set forth in claim 13 further comprising the step of disposing a metal layer on the resist film (12).

15. A resist film (12) having a pattern formed therein, said resist film (12) comprising;

a copolymer of an organosilicone component and an organic component.

16. A resist film (12) as set forth in claim 15 wherein said organosilicone component comprises a silicone group selected from the group of an (SiR₂O) group, an (SiRO_2/3) group, and combinations thereof, wherein R is selected from the group of an amino group, a hydroxyl group, an ether group, a carboxyl group, hydrogen, a phenyl group, a hydrocarbon group, a fluorocarbon group, and combinations thereof.

17. A resist film (12) as set forth in claim 16 wherein said organosilicone component comprises a dialkyl silane.

18. A resist film (12) as set forth in claim 15 wherein said organic component is selected from the group of acrylates, styrenes, cyclic olefins, and combinations thereof.

20. A resist film (12) as set forth in claim 15 wherein a molar ratio of said organosilicone component to said organic component in said copolymer is from 1:

10 to 5;

1.

19. A resist film (12) as set forth in claim 32 wherein said copolymer is further defined as at least one of polystyrene-poly(dimethyl siloxane) block copolymer, poly(dimethyl siloxane)-methyl mathacrylate (MMA) graft copolymer, poly(dimethyl siloxane)-methyl acrylate graft copolymer, poly(dimethyl siloxane)-ethyl acrylate graft copolymer, methyl acrylate-isobornyl acrylate-poly(dimethyl siloxane) graft copolymer, polystyrene-poly(dimethyl siloxane) graft copolymer, poly(cyclic olefin)-poly(dimethyl siloxane) graft copolymer, polysiloxane-poly(ester) copolymer, polysiloxane-polyamide copolymer, polysiloxane-polyimide copolymer, polysiloxane-polyurethane copolymer, polysiloxane-polysulfone copolymer, polysiloxane-polyether copolymer, and polysiloxane-polycarbonate copolymer.

21. An article (10) comprising;

a substrate (14),

a resist film (12) formed on said substrate (14) and having a pattern formed therein;

said resist film (12) comprising a copolymer of an organosilicone component and an organic component.

22. An article (10) as set forth in claim 21 wherein said organosilicone component comprises a silicone group selected from the group of an (SiR₂O) group, an (SiRO_2/3) group, and combinations thereof, wherein R is selected from the group of an amino group, a hydroxyl group, an ether group, a carboxyl group, hydrogen, a phenyl group, a hydrocarbon group, a fluorocarbon group, and combinations thereof.

23. An article (10) as set forth in claim 22 wherein said organosilicone component comprises a dialkyl silane.

24. An article (10) as set forth in claim 21 wherein said organic component is selected from the group of acrylates, styrenes, cyclic olefins, and combinations thereof.

25. An article (10) as set forth in claim 21 wherein the copolymer is further defined as at least one of polystyrene-poly(dimethyl siloxane) block copolymer, poly(dimethyl siloxane)-methyl mathacrylate (MMA) graft copolymer, poly(dimethyl siloxane)-methyl acrylate graft copolymer, poly(dimethyl siloxane)-ethyl acrylate graft copolymer, methyl acrylate-isobornyl acrylate-poly(dimethyl siloxane) graft copolymer, polystyrene-poly(dimethyl siloxane) graft copolymer, poly(cyclic olefin)-poly(dimethyl siloxane) graft copolymer, polysiloxane-poly(ester) copolymer, polysiloxane-polyamide copolymer, polysiloxane-polyimide copolymer, polysiloxane-polyurethane copolymer, polysiloxane-polysulfone copolymer, polysiloxane-polyether copolymer, and polysiloxane-polycarbonate copolymer.

26. An article (10) as set forth in claim 21 wherein a molar ratio of said organosilicone component to said organic component in said copolymer is from 1:

10 to 5;

1.

27. An article (10) as set forth in claim 21 further comprising a planarizing film (16) disposed between said substrate (14) and said resist film (12).

28. An article (10) as set forth in claim 27 wherein said planarizing film (16) is formed from a polymer having an oxygen plasma etch rate greater than an oxygen plasma etch rate of said copolymer.

29. An article (10) as set forth in claim 27, wherein said planarizing film (16) is etched to form a pattern in said planarizing film (16).

30. An article (10) as set forth in claim 29 wherein a metal layer is disposed on said resist film (12).