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Semiconductor device and method of forming the same

  • US 20070126048A1
  • Filed: 11/16/2006
  • Published: 06/07/2007
  • Est. Priority Date: 11/17/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a non-volatile memory device formed on a substrate;

    a first selection device formed on the substrate at one side of the non-volatile memory device; and

    a floating junction formed in the substrate between the non-volatile memory device and the first selection device;

    wherein a gate of the first selection device is formed of a single-layered conductive layer.

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