Dielectric multilayer filter

• US 20070127126A1
• Filed: 10/03/2006
• Published: 06/07/2007
• Est. Priority Date: 12/07/2005
• Status: Abandoned Application

• Current Assignee: Murakami Corporation
• Original Assignee: Murakami Corporation
• Inventors: Terada, Yoshiyuki
• Application Number:
  US11/542,429
• Publication Number:
  US 20070127126A1
• Time in Patent Office: Days
• US Class Current: 359/586
• CPC Class Codes: G02B 5/0833 comprising inorganic materials only
• CPC Class Codes: G02B 5/282 reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection

Abstract

To provide a dielectric multilayer filter, such as an IR cut filter and a red-reflective dichroic filter, that produces an effect of reducing incident-angle dependency and has a wide reflection band. A first dielectric multilayer film 30 is formed on the front surface of a transparent substrate 28, and a second dielectric multilayer film 32 is formed on the back surface of the transparent substrate 28. The width W1 of the reflection band of the first dielectric multilayer film 30 is set narrower than the width W2 of the reflection band of the second dielectric multilayer film 32. The half-value wavelength E2_L of the shorter-wavelength-side edge of the reflection band of the second dielectric multilayer film 32 is set between the half-value wavelength E1_L at the shorter-wavelength-side edge and the half-value wavelength E1_H at the longer-wavelength-side edge of the reflection band of the first dielectric multilayer film 30.

Claims

1. A dielectric multilayer filter comprising:

a transparent substrate;

a first dielectric multilayer film having a predetermined reflection band formed on one surface of said transparent substrate; and

a second dielectric multilayer film having a predetermined reflection band formed on the other surface of said transparent substrate,

wherein the width of the reflection band of said first dielectric multilayer film is set narrower than the width of the reflection band of said second dielectric multilayer film, and

the shorter-wavelength-side edge of the reflection band of said second dielectric multilayer film is set between the shorter-wavelength-side edge and the longer-wavelength-side edge of the reflection band of said first dielectric multilayer film.

2. The dielectric multilayer filter according to claim 1, wherein the average refractive index of the whole of said first dielectric multilayer film is set higher than the average refractive index of the whole of said second dielectric multilayer film.

3. The dielectric multilayer filter according to claim 1, wherein said first dielectric multilayer film has a structure including films of a first dielectric material having a predetermined refractive index and films of a second dielectric material having a refractive index higher than that of the first dielectric material that are alternately stacked,

said second dielectric multilayer film has a structure including films of a third dielectric material having a predetermined refractive index and films of a fourth dielectric material having a refractive index higher than that of the third dielectric material that are alternately stacked, and

the difference in refractive index between said first dielectric material and said second dielectric material is set smaller than the difference in refractive index between said third dielectric material and said fourth dielectric material.

4. The dielectric multilayer filter according to claim 3, wherein said first dielectric material has a refractive index of 1.60 to 2.10 for light having a wavelength of 550 nm,

said second dielectric material has a refractive index of 2.0 or higher for light having a wavelength of 550 nm,

said third dielectric material has a refractive index of 1.30 to 1.59 for light having a wavelength of 550 nm, and

said fourth dielectric material has a refractive index of 2.0 or higher for light having a wavelength of 550 nm.

5. The dielectric multilayer filter according to claim 4, wherein said second dielectric material is any of TiO₂, Nb₂O₅ and Ta₂O₅ or a complex oxide mainly containing any of TiO₂, Nb₂O₅ and Ta₂O₅,

said third dielectric material is SiO₂, and

said fourth dielectric material is any of TiO₂, Nb₂O₅ and Ta₂O₅ or a complex oxide mainly containing any of TiO₂, Nb₂O₅ and Ta₂O₅.

6. The dielectric multilayer filter according to claim 4, wherein said first dielectric material is any of Bi₂O₃, Ta₂O₅, La₂O₃, Al₂O₃, SiO_x (x≦

1), LaF₃, a complex oxide of La₂O₃ and Al₂O₃ and a complex oxide of Pr₂O₃ and Al₂O₃, or a complex oxide of two or more of these materials.

7. The dielectric multilayer filter according to claim 3, wherein, in said first dielectric multilayer film, the optical thickness of the films of said second dielectric material is set greater than the optical thickness of the films of said first dielectric material.

8. The dielectric multilayer filter according to claim 7, wherein the value of “

(the optical thickness of the films of the second dielectric material)/(the optical thickness of the films of the first dielectric material)”

is greater than 1.0 and equal to or smaller than 4.0.

9. The dielectric multilayer filter according to claim 1, wherein the dielectric multilayer filter is an infrared cut filter that transmits visible light and reflects infrared light.

10. The dielectric multilayer filter according to claim 1, wherein the dielectric multilayer filter is a red-reflective dichroic filter that reflects red light.