Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same
First Claim
1. An internal voltage level control circuit for controlling an activation and an inactivation of an internal voltage generating circuit which generates an internal voltage from an external power voltage, wherein the internal voltage is compared to at least one of a first predetermined voltage and a second predetermined voltage that define a predetermined voltage range, wherein when the internal voltage is within the predetermined voltage range, the internal voltage generating circuit is inactivated, and wherein the internal voltage generating circuit includes a boost circuit for boosting the external power voltage, wherein the boost circuit is controlled based on at least one of the first predetermined voltage and the second predetermined voltage.
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Accused Products
Abstract
There are provided a voltage level control circuit with a reduced power consumption and a method of controlling the same. When a signal “A” is in a “L” level and a signal PL entered from the outside of the voltage level control circuit becomes .“H” level, a latch signal La outputted from a latch (11) becomes “H” level, whereby NFETs (14, 17, 24) turn ON. A voltage dividing circuit comprising resistances (12, 13) and current mirror differential amplifiers (20, 27) are placed in active states to output “H” as a signal A which controls a boost voltage Vbt (word line driving voltage. As the boost voltage Vbt is increased and reaches to a reference voltage Vref2, a voltage V2 becomes “H”, whereby the signal A becomes “L”. After the signal A become “L”, the latch (11) is made through. At this time, the signal PL is “L”, the latch signal La outputted from the latch (11) becomes “L”, whereby the NFETs (14, 7, 24) turn OFF. As described here, the NFETs (14, 7, 24) is kept OFF in the other time period than when needed, in order to reduce the power consumption.
13 Citations
16 Claims
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1. An internal voltage level control circuit for controlling an activation and an inactivation of an internal voltage generating circuit which generates an internal voltage from an external power voltage,
wherein the internal voltage is compared to at least one of a first predetermined voltage and a second predetermined voltage that define a predetermined voltage range, wherein when the internal voltage is within the predetermined voltage range, the internal voltage generating circuit is inactivated, and wherein the internal voltage generating circuit includes a boost circuit for boosting the external power voltage, wherein the boost circuit is controlled based on at least one of the first predetermined voltage and the second predetermined voltage.
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5. An internal voltage level control circuit, comprising:
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a comparator which compares an internal voltage to at least one of a first reference voltage and a second reference voltage that define a reference voltage range;
an output control circuit which applies an external voltage to an output of the comparator when the comparator is inactivated; and
an internal voltage generator that generates the internal voltage, wherein the internal voltage generator includes a boost circuit for boosting the external voltage, wherein the boost circuit is controlled based on at least one of the first reference voltage and the second reference voltage. - View Dependent Claims (6, 7, 8, 9)
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10. A semiconductor memory device, comprising:
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an internal voltage generating circuit that generates an internal voltage from an external voltage; and
an internal voltage level control circuit for comparing the internal voltage to at least one of a first reference voltage and a second reference voltage that define a reference voltage range and for controlling an activation and an inactivation of the internal voltage generating circuit based on a comparison result, wherein when the internal voltage is within the reference voltage range, the internal voltage generating circuit is inactivated, and wherein the internal voltage generating circuit includes a boost circuit for boosting the external voltage, wherein the boost circuit is controlled based on at least one of the first reference voltage and the second reference voltage. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification