Mask blank and photomask having antireflective properties

• US 20070128528A1
• Filed: 09/26/2006
• Published: 06/07/2007
• Est. Priority Date: 09/27/2005
• Status: Abandoned Application

• Current Assignee: Frank Schmidt, Frank Sobel, Gunter Hess, Hans Becker, Markus Renno, Oliver Goetzberger, Ute Buttgereit
• Original Assignee: Frank Schmidt, Frank Sobel, Gunter Hess, Hans Becker, Markus Renno, Oliver Goetzberger, Ute Buttgereit
• Inventors: Schmidt, Frank, Buttgereit, Ute, Renno, Markus, Becker, Hans, Hess, Gunter, Sobel, Frank, Goetzberger, Oliver
• Application Number:
  US11/526,866
• Publication Number:
  US 20070128528A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: G03F 1/24 Reflection masks; Preparation thereof
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/30 Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 1/46 Antireflective coatings
• CPC Class Codes: G21K 2201/067 Construction details

Abstract

The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less with improved anti reflection properties; and to EUVL mask blanks having improved inspection properties.

Claims

1. A mask blank comprising a substrate and a thin film system provided on the substrate, wherein said thin film system comprises at least three anti reflective layers wherein each of said antireflective layers comprises at least two sublayers of different composition,

said mask blank being able of producing a photomask at an exposure light having a wavelength of 300 nm or less.

2. A mask blank according to claim 1, wherein said mask blank is a mask blank is a binary mask blank and wherein the thin film system of the binary mask blank comprises an absorbing layer and anti reflective layers comprising at least two sublayers

at the front side of the absorbing layer,

at the backside of the absorbing layer

at the backside of the substrate.

3. A mask blank according to claim 1, wherein said mask blank is a mask blank is a phase shift mask blank and wherein the thin film system of the binary mask blank comprises an absorbing layer, a phase shift layer and anti reflective layers comprising at least two sublayers

at the front side of the absorbing layer,

at the backside of the phase shift layer

at the backside of the substrate.

4. The mask blank according to claim 3, additionally comprising an anti reflective layer comprising at least two layers at the front side of the substrate.

5. The mask blank according to claim 1, wherein said mask blank is a mask blank is a phase shift mask blank and wherein the thin film system of the binary mask blank comprises an absorbing layer, a phase shift layer and anti reflective layers comprising at least two sublayers

at the backside of the phase shift layer,

at the front side of the substrate,

at the back side of the substrate.

6. The mask blank according to claim 5, wherein said mask blank additionally comprises an anti reflective layer on the absorbing layer, said anti reflective layer consisting of one layer or comprising at least two sublayers.

7. The mask blank according to claim 1, wherein anti reflective layers comprising at least two sublayers and provided at the front and/or backside of the substrate are substantially not etched when the mask blank is transformed into a photomask.

8. The mask blank according to claim 7, wherein the upper sublayer of the anti reflective layer comprising at least two sublayers and provided on the front side and/or on the backside of the substrate comprise SiO₂ in an amount of at least 90 at. %.

9. The mask blank according to claim 1, wherein one, two or all of the anti reflective layers comprising at least two sublayers comprise a sublayer comprising oxides, oxy nitrides and/or nitrides of B, Al and/or Ga in an amount of at least 90 at. %.

10. The mask blank according to claim 1, wherein all sublayers of a specific anti reflective layer can be etched using the same etching agent.

11. The mask blank according to claim 1, said mask blank being able of producing a photo mask at an exposure light having a wavelength of 200 nm or less.

12. A mask blank comprising a substrate and a thin film system provided on the substrate, wherein said thin film system comprises at least one anti reflective layer having at least two sublayers wherein said anti reflective layer comprises a sublayer comprising oxides and/or nitrides of B, Al and/or Ga,

said mask blank being able of producing a photomask at an exposure light having a wavelength of 300 nm or less.

13. The mask blank according to claim 12, wherein the sublayer comprising oxides and/or nitrides of B, Al and/or Ga contains at least 90 at. % of oxides and/or nitrides of B, Al and/or Ga.

14. The mask blank according to claim 12, wherein said mask blank is a binary mask blank and comprises a substrate and an absorbing layer;

wherein the anti reflective layer comprising a sublayer comprising oxides and/or nitrides of B, Al and/or Ga is provided at the front side of the absorbing layer, at a back side of the absorbing layer, at the front side of the substrate and/or at the backside of the substrate.

15. The mask blank according to claim 12, wherein said mask blank is a phase shift mask blank and comprises a substrate, an absorbing layer and a phase shift layer;

wherein the anti reflective layer comprising a sublayer comprising oxides and/or nitrides of B, Al and/or Ga is provided at the front side of the absorbing layer, at the back side of the phase shift layer, at the front side of the substrate and/or at the backside of the substrate.

16. The mask blank according to claim 12, said mask blank being able of producing a photomask at an exposure light having a wavelength of 200 nm or less.

17. A substrate for a mask blank said mask blank being able of producing a photomask at an exposure light having a wavelength of 300 nm or less;

wherein said substrate comprises an anti reflective layer on the front side and on the backside of the substrate, wherein said anti reflective layers each comprise at least two sublayers of different composition.

18. The substrate according to claim 17, wherein the sublayer of the anti reflective layer on the frontside of the substrate comprises oxides and/or nitrides of B, Al and/or Ga in an amount of at least 90 at. %.

19. The substrate according to claim 17, wherein the uppermost sublayer of the anti reflective layer comprises SiO₂ in an amount of at least 90 at. %.

20. The substrate according to claim 17, wherein the substrate is a calcium fluoride substrate, a quartz substrate or a fluorine-doped quartz substrate.

22. A mask blank comprising a substrate according to claim 17 or claim 21, wherein said mask blank is a binary mask blank or a phase shift mask blank and is able of producing a photomask at an exposure light having a wavelength of 300 nm or less.

23. The mask blank according to claim 22, said mask blank being able of producing a photomask at an exposure light having a wavelength of 200 nm or less.

21. A substrate for a mask blank said mask blank being able of producing a photomask at an exposure light having a wavelength of 300 nm or less;

wherein said substrate comprises an anti reflective layer on the front side and/or on the backside of the substrate;

wherein said anti reflective layer comprises at least two sublayers of different composition; and

wherein at least one sublayer comprises oxides and/or nitrides of B, Al and/or Ga.

24. A mask blank comprising a substrate and a thin film system provided on the substrate, wherein said thin film system comprises an absorbing layer and an anti reflective layer on the absorbing layer, wherein said anti reflective layer on the absorbing layer comprises at least two sublayers of different composition, said mask blank being able of producing a photomask at an exposure light having a wavelength of 300 nm or less.

25. The mask blank according to claim 24, wherein said mask blank is a binary mask blank.

26. The mask blank according to claim 24, wherein said mask blank is a phase shift mask blank.

27. The mask blank according to claim 24, wherein the anti reflective layer comprises a dielectric sublayer and a further layer having a higher extinction coefficient than said dielectric layer.

28. The mask blank according to claim 24, wherein the dielectric sublayer comprises oxides and/or nitrides of Si, Ge, B, Al Ga and/or Hf in an amount of at least 90 at. %.

29. The mask blank according to claim 24, wherein the further layer comprises oxides, nitrides or oxy nitrides of a metal selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Zn, Sn or thereof mixtures.

30. A mask blank comprising a substrate and a thin film system provided on the substrate, wherein said thin film system comprises a functional layer and an anti reflective layer having at least two sublayers under said functional layer, wherein said anti reflective layer can be etched by the same etching agent as said functional layer, wherein the anti reflective layer comprises at least two sublayers of different composition, said mask blank being able of producing a photomask at an exposure light having a wavelength of 300 nm or less.

31. The mask blank according to claim 30 wherein the anti reflective layer comprises a dielectric sublayer and a semitransparent sublayer.

32. The mask blank according to claim 31, wherein the dielectric sublayer comprises oxides and/or nitrides of B, Al and/or Ga in an amount of at least 90 at. %.

33. The mask blank according to claim 31, wherein the semitransparent sublayer comprises a metal selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Zn, Sn or thereof mixtures.

34. The mask blank according to claim 30, additionally comprising an anti reflective layer on the substrate, wherein said anti reflective layer on the substrate is substantially not etched when the functional layer and the anti reflective layer under the functional layer are etched.

35. The mask blank according to claim 30, wherein the functional layer is a phase shift layer.

36. The mask blank according to claim 30, wherein the functional layer is an absorber layer.

37. An EUVL mask blank comprising a substrate and a thin film system provided on the substrate;

wherein said thin film system comprises

a reflective multilayer stack

an absorber layer

and wherein on the absorber layer an antireflection layer comprising at least two sublayers is provided, said sublayers comprising a dielectric layer and a semitransparent layer.

38. The mask blank according to claim 37, wherein said dielectric sublayer comprises oxides and/or nitrides of a metal selected from the group consisting of Si, Al, Ga, B, or mixtures thereof.

39. The mask blank according to claim 37, wherein the dielectric sublayer further comprises at most 5 at. % of metals selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Zn, Sn or mixtures thereof.

40. The mask blank according to claim 37, wherein the dielectric sublayer essentially consists of AlN or Al₂O₃.

41. The mask blank according to claim 37, wherein the semitransparent layer comprises a metal selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Zn, Sn or a mixture thereof.

42. The mask blank according to claim 41, wherein the semitransparent layer further comprises N, O, C, B, or mixtures thereof.

43. The mask blank according to claim 37, wherein the semitransparent layer essentially consists of TaON.

44. The mask blank according to claim 37, wherein the absorber layer essentially consists of TaN.

45. The mask blank according to claim 37, wherein the semitransparent layer has a thickness of from 2 to 10 nm.

46. The mask blank according to claim 37, wherein the dielectric layer has a thickness of from 2 to 15 nm.

47. The mask blank according to claim 37, wherein the antireflection layer comprising at least two sublayers has a thickness of from 10 to 20 nm.

48. The mask blank according to claim 37, wherein the thin film system further comprises a buffer layer, a capping layer and/or a backside coating.