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Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same

  • US 20070128760A1
  • Filed: 09/15/2006
  • Published: 06/07/2007
  • Est. Priority Date: 12/07/2005
  • Status: Active Grant
First Claim
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1. A method of making complementary diodes, comprising:

  • a) forming a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type;

    b) forming a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type;

    c) forming a patterned insulator layer over the first and second patterned semiconductor layers and the substrate; and

    d) forming a first patterned metal layer on the patterned insulator layer and in electrical contact with the first and second patterned semiconductor layers.

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