Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same
First Claim
1. A method of making complementary diodes, comprising:
- a) forming a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type;
b) forming a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type;
c) forming a patterned insulator layer over the first and second patterned semiconductor layers and the substrate; and
d) forming a first patterned metal layer on the patterned insulator layer and in electrical contact with the first and second patterned semiconductor layers.
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Accused Products
Abstract
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
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Citations
27 Claims
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1. A method of making complementary diodes, comprising:
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a) forming a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type;
b) forming a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type;
c) forming a patterned insulator layer over the first and second patterned semiconductor layers and the substrate; and
d) forming a first patterned metal layer on the patterned insulator layer and in electrical contact with the first and second patterned semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A circuit, comprising:
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a) an NMOS diode having at least one printed or laser-written structure therein;
b) a PMOS diode having at least one printed or laser-written structure therein; and
c) a metal wire connecting the NMOS diode to the PMOS diode. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification