POLY-Si THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME
First Claim
Patent Images
1. A thin film transistor comprising:
- an Si-based channel having a nonlinear electron-moving path;
a source and a drain disposed on either side of the channel, respectively;
a gate disposed above the channel;
an insulator interposed between the channel and the gate; and
a substrate supporting the channel, the source and the drain.
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Abstract
A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
167 Citations
11 Claims
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1. A thin film transistor comprising:
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an Si-based channel having a nonlinear electron-moving path;
a source and a drain disposed on either side of the channel, respectively;
a gate disposed above the channel;
an insulator interposed between the channel and the gate; and
a substrate supporting the channel, the source and the drain. - View Dependent Claims (2, 3, 4)
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5. An organic light-emitting display comprising:
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a substrate;
a scanning signal line and a driving signal line disposed on the substrate in a matrix pattern;
a switching transistor and a driving transistor disposed in a pixel region defined by the scanning signal line and the driving signal line, wherein the switching transistor is connected to the scanning signal line and the driving signal line and the driving transistor is driven by the switching transistor; and
an organic light-emitting diode operated by the driving transistor, wherein the switching transistor comprises;
an Si-based channel having a nonlinear electron-moving path;
a source and a drain disposed on either side of the channel respectively; and
a gate disposed above the channel. - View Dependent Claims (6, 7, 8)
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9. A method of manufacturing a thin film transistor comprising:
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forming an Si-based channel having a nonlinear electron-moving path on a substrate;
forming a source and a drain disposed on either side of the channel, respectively;
forming a gate disposed above the channel; and
forming an insulator interposed between the channel and the gate. - View Dependent Claims (10, 11)
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Specification