Micro electro-mechanical system packaging and interconnect

• US 20070128828A1
• Filed: 07/29/2005
• Published: 06/07/2007
• Est. Priority Date: 07/29/2005
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Chen, Chien-Hua, Kang, Henry, Bamber, John
• Granted Patent: US 8,217,473 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: B81C 3/002 Aligning microparts

Abstract

A micro electro-mechanical system (MEMS) device includes an electrical wafer, a mechanical wafer, a plasma treated oxide seal bonding the electrical wafer to the mechanical wafer, and an electrical interconnect between the electrical wafer and the mechanical wafer.

Claims

1. A micro electro-mechanical system (MEMS) device comprising:

an electrical wafer;

a mechanical wafer;

a plasma treated oxide seal bonding the electrical wafer to the mechanical wafer; and

an electrical interconnect between the electrical wafer and the mechanical wafer.

2. The MEMS device of claim 1, wherein the electrical interconnect comprises solder.

3. The MEMS device of claim 1, wherein the electrical wafer comprises a complementary metal-oxide-semiconductor (CMOS) circuit.

4. The MEMS device of claim 1, wherein the mechanical wafer comprises a micromover.

5. The MEMS device of claim 1, wherein the plasma treated oxide seal comprises plasma treated SiO₂.

6. The MEMS device of claim 1, wherein the plasma treated oxide seal provides a hermetic seal.

7. The MEMS device of claim 1, wherein the plasma treated oxide seal comprises a plasma treated oxide seal ring.

8. A micro electro-mechanical system (MEMS) device comprising:

a first chip in a first package;

a second chip in a second package;

a plasma treated oxide seal bonding the first package to the second package; and

an electrical interconnect between the first chip and the second chip

9. The MEMS device of claim 8, wherein the electrical interconnect bonds a face of the first chip to a face of the second chip.

10. The MEMS device of claim 8, wherein the electrical interconnect bonds a face of the first chip to a back of the second chip.

11. The MEMS device of claim 8, wherein the electrical interconnect comprises solder.

12. The MEMS device of claim 8, wherein the plasma treated oxide seal comprises plasma treated SiO₂.

13. The MEMS device of claim 8, wherein the plasma treated oxide seal provides a hermetic seal.

14. The MEMS device system of claim 8, wherein the plasma treated oxide seal comprises a plasma treated oxide seal ring.

15. A micro electro-mechanical system (MEMS) device comprising:

an electrical die;

a mechanical die;

a plasma treated oxide seal ring bonding the electrical die to the mechanical die; and

an electrical interconnect between the electrical die and the mechanical die.

16. The MEMS device system of claim 15, wherein the electrical interconnect comprises solder.

17. The MEMS device of claim 15, wherein the electrical die comprises a complementary metal-oxide-semiconductor (CMOS) circuit.

18. The MEMS device of claim 15, wherein the mechanical die comprises a micromover.

19. The MEMS device of claim 15, wherein the plasma treated oxide seal ring comprises plasma treated SiO₂.

20. The MEMS device of claim 15, wherein the plasma treated oxide seal ring provides a hermetic seal.

21. A method of electrically interconnecting wafers, the method comprising:

providing a first wafer having a solder ball for an electrical interconnect;

providing a second wafer having a contact for the electrical interconnect;

bonding the first wafer to the second wafer at room temperature with a plasma treated oxide seal to align the solder ball and the contact for the electrical interconnect; and

reflowing the solder to form the electrical interconnect.

22. The method of claim 21, further comprising:

setting a gap between the first wafer and the second wafer.

23. The method of claim 21, wherein providing the first wafer comprises providing a mechanical wafer, and wherein providing the second wafer comprises providing an electrical wafer.

24. A method of packaging micro electro-mechanical systems, the method comprising:

depositing first oxide seal material on a first wafer;

patterning the first oxide seal material to form a first oxide seal ring;

plasma treating the first oxide seal ring;

contacting the plasma treated first oxide seal ring to a second wafer to bond the first wafer to the second wafer; and

annealing the first wafer and the second wafer to reflow solder to form electrical interconnects between the first wafer and the second wafer.

25. The method of claim 24, wherein plasma treating the first oxide seal ring comprises oxygen plasma treating the first oxide seal ring.

26. The method of claim 24, wherein depositing first oxide seal material on the first wafer comprises depositing first oxide seal material on a mechanical wafer.

27. The method of claim 24, wherein contacting the plasma treated first oxide seal ring to the second wafer comprises contacting the plasma treated first oxide seal ring to an electrical wafer.

28. The method of claim 24, further comprising:

depositing second oxide seal material on the second wafer;

patterning the second oxide seal material to form a second oxide seal ring; and

plasma treating the second oxide seal ring,

wherein contacting the plasma treated first oxide seal ring to the second wafer comprises contacting the plasma treated first oxide seal ring to the plasma treated second oxide seal ring.