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Non-polar (a1,b,in,ga)n quantum wells

  • US 20070128844A1
  • Filed: 12/11/2003
  • Published: 06/07/2007
  • Est. Priority Date: 04/15/2003
  • Status: Abandoned Application
First Claim
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1. A method for forming a nitride semiconductor device, comprising:

  • (a) growing one or more gallium nitride (GaN) layers on a substrate; and

    (b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 Å

    to approximately 70 Å

    .

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