Non-polar (a1,b,in,ga)n quantum wells
First Claim
Patent Images
1. A method for forming a nitride semiconductor device, comprising:
- (a) growing one or more gallium nitride (GaN) layers on a substrate; and
(b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 Å
to approximately 70 Å
.
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Abstract
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.
36 Citations
11 Claims
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1. A method for forming a nitride semiconductor device, comprising:
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(a) growing one or more gallium nitride (GaN) layers on a substrate; and
(b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 Å
to approximately 70 Å
. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A nitride semiconductor device, wherein the nitride semiconductor device is created using a process comprising:
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(a) growing one or more gallium nitride (GaN) layers on a substrate; and
(b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 Å
to approximately 70 Å
.
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11. A nitride semiconductor device, comprising:
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(a) one or more gallium nitride (GaN) layers grown on a substrate; and
(b) one or more quantum wells formed from one or more non-polar (Al,B,In,Ga)N layers grown on the GaN layers, wherein the quantum well has a width ranging from approximately 20 Å
to approximately 70 Å
.
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Specification