Gas Supplying unit and substrate processing apparatus

• US 20070131168A1
• Filed: 10/27/2006
• Published: 06/14/2007
• Est. Priority Date: 10/31/2005
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Saito, Tetsuya, Narushima, Kensaku, Koizumi, Makoto, Cheng, Fang, Kakegawa, Takashi, Gomi, Hisashi, Mase, Takahisa, Wakabayashi, Satoshi, Tada, Kunihiro
• Application Number:
  US11/588,423
• Publication Number:
  US 20070131168A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

The invention relates to a gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate. The gas supplying unit includes a plurality of nickel members. A large number of gas-supplying holes is formed at a lower surface of the gas supplying unit, a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

Claims

1. A gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate:

the gas supplying unit comprising

a plurality of nickel members,

wherein

a large number of gas-supplying holes is formed at a lower surface of the gas supplying unit,

a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and

the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

10. A gas supplying unit according to claim 1, wherein

the intermediate member is made of hastelloy or carbon.

12. A gas supplying unit according to claim 1, wherein

the process gas includes a first gas and a second gas,

the first gas and the second gas are capable of reacting on each other in order to generate a film-forming component,

the first gas and the second gas are mixed in advance to become a mixed gas, and

the mixed gas is supplied into the processing container as a process gas.

2. A gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate:

the gas supplying unit comprising

a shower-plate mainly consisting of nickel, a large number of gas-supplying holes being formed in the shower-plate, and

a base member provided above the shower-plate in order to form a process-gas diffusion space between the base member and the shower-plate,

wherein

a portion of the base member opposite to the shower-plate is made mainly of nickel, and

an upper surface of a peripheral portion of the shower-plate and a lower surface of a peripheral portion of the base member are hermetically fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

3. A gas supplying unit according to claim 2, wherein

the base member is formed into a low and large cylindrical shape having a bottom,

an upper end of a peripheral side wall of the base member is hermetically attached to a peripheral portion of the opening of the processing container, and

a bottom surface of the peripheral side wall of the base member is hermetically fixed to a peripheral portion of the shower-plate.

4. A gas supplying unit according to claim 3, wherein

the peripheral side wall of the base member is made of a material having a lower thermal conductivity than nickel.

5. A gas supplying unit according to claim 4, wherein

the base member is provided with a reinforcement member made of a material having a lower thermal conductivity than nickel, in order to reinforce the peripheral side wall of the base member.

6. A gas supplying unit according to claim 4, wherein

the material having a lower thermal conductivity than nickel is hastelloy.

7. A gas supplying unit according to claim 3, wherein

a coolant way is formed at an upper-end portion of the peripheral side wall of the base member.

8. A gas supplying unit according to claim 7, wherein

an air is adapted to flow through the coolant way.

9. A gas supplying unit according to claim 2, wherein

a sheet-like heater is arranged on the base member via an insulating plate,

the insulating plate is divided into a plurality of insulating-plate elements in a planar direction thereof, and

the sheet-like heater is divided into a plurality of sheet-heater elements in a planar direction thereof.

11. A gas supplying unit according to claim 2, wherein

the intermediate member is made of hastelloy or carbon.

13. A gas supplying unit according to claim 2, wherein

the process gas includes a first gas and a second gas,

the first gas and the second gas are capable of reacting on each other in order to generate a film-forming component,

the first gas and the second gas are mixed in advance to become a mixed gas, and

the mixed gas is supplied into the processing container as a process gas.

14. A substrate processing apparatus comprising

a processing container whose ceiling part has an opening,

a stage provided in the processing container, for placing a substrate thereon,

a gas discharging unit for discharging a gas from the processing container, and

a gas supplying unit arranged to hermetically fit in the opening of the ceiling part of the processing container,

wherein

the gas supplying unit comprises a plurality of nickel members,

a large number of gas-supplying holes is formed at a lower surface of the gas supplying unit,

a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and

the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

19. A substrate processing apparatus according to claim 14, further comprising

a first temperature-controlling unit provided in the stage for heating the substrate,

a second temperature-controlling unit provided in the gas supplying unit for controlling a temperature of a surface of the gas supplying unit in contact with the process gas, and

a controlling part that controls the first temperature-controlling unit and the second temperature-controlling unit,

wherein

a gas supplying control is adapted to be conducted in such a manner that:

a titanium chloride gas and a hydrogen gas are supplied as a process gas from the gas supplying unit into the processing container in order to generate a titanium film on the substrate, and then an ammonia gas is supplied from the gas supplying unit into the processing container in order to nitride the titanium film on the substrate, and

the controlling part is adapted to control the second temperature-controlling unit in such a manner that;

a temperature of the surface of the gas supplying unit in contact with the process gas is lower than a temperature at which nickel and ammonia react to generate a solid product, and is within a decomposition temperature zone of TiClx (x=1, 2 or

     3).

20. A substrate processing apparatus according to claim 19, wherein

the controlling part is adapted to control the second temperature-controlling unit in such a manner that a temperature of the surface of the gas supplying unit in contact with the process gas is 400 to 450°

C.

21. A substrate processing apparatus according to claim 19, wherein

the controlling part is adapted to control the first temperature-controlling unit in such a manner that a temperature of the substrate is increased to 450 to 600°

C., and

the controlling part is adapted to control the second temperature-controlling unit in such a manner that a temperature of the second temperature-controlling unit is 180 to 475°

C. depending on the temperature of the substrate.

15. A substrate processing apparatus comprising

a processing container whose ceiling part has an opening,

a stage provided in the processing container, for placing a substrate thereon,

a gas discharging unit for discharging a gas from the processing container, and

a gas supplying unit arranged to hermetically fit in the opening of the ceiling part of the processing container,

wherein

the gas supplying unit comprises:

a shower-plate mainly consisting of nickel, a large number of gas-supplying holes being formed in the shower-plate; and

a base member provided above the shower-plate in order to form a process-gas diffusion space between the base member and the shower-plate,

a portion of the base member opposite to the shower-plate is made mainly of nickel, and

an upper surface of a peripheral portion of the shower-plate and a lower surface of a peripheral portion of the base member are hermetically fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

16. A substrate processing apparatus according to claim 15, wherein

the base member is formed into a low and large cylindrical shape having a bottom,

an upper end of a peripheral side wall of the base member is hermetically attached to a peripheral portion of the opening of the processing container, and

a bottom surface of the peripheral side wall of the base member is hermetically fixed to a peripheral portion of the shower-plate.

17. A substrate processing apparatus according to claim 16, wherein

the upper end of the peripheral side wall of the base member is hermetically attached to the peripheral portion of the opening of the processing container via an upper-side insulating member made of alumina for radio-frequency insulation, and

a lower-side insulating member made of quartz for radio-frequency insulation is provided below the upper-side insulating member so as to cover a portion of the processing container located laterally adjacent to the peripheral side wall of the base member.

18. A substrate processing apparatus according to claim 16, wherein

the upper end of the peripheral side wall of the base member is hermetically attached to the peripheral portion of the opening of the processing container via a sealing member made of resin.

22. A substrate processing apparatus according to claim 15, further comprising

a first temperature-controlling unit provided in the stage for heating the substrate,

a second temperature-controlling unit provided in the gas supplying unit for controlling a temperature of a surface of the gas supplying unit in contact with the process gas, and

a controlling part that controls the first temperature-controlling unit and the second temperature-controlling unit,

wherein

a gas supplying control is adapted to be conducted in such a manner that:

a titanium chloride gas and a hydrogen gas are supplied as a process gas from the gas supplying unit into the processing container in order to generate a titanium film on the substrate, and then an ammonia gas is supplied as a process gas from the gas supplying unit into the processing container in order to nitride the titanium film on the substrate, and

the controlling part is adapted to control the second temperature-controlling unit in such a manner that;

a temperature of the surface of the gas supplying unit in contact with the process gas is lower than a temperature at which nickel and ammonia react to generate a solid product, and is within a decomposition temperature zone of TiClx (x=1, 2 or

     3).