Method of making an electronic device cooling system
First Claim
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1. A method comprising, forming a conductive layer on an inner surface of a substrate;
- providing a sacrificial layer over the conductive layer;
forming a plurality of channels in the sacrificial layer;
plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material; and
etching the sacrificial layer to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer is etched.
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Abstract
A method is provided. The method includes forming a conductive layer on an inner surface of a substrate and providing a sacrificial layer over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer and plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material. The method also includes etching the sacrificial layer to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer is etched.
18 Citations
24 Claims
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1. A method comprising,
forming a conductive layer on an inner surface of a substrate; -
providing a sacrificial layer over the conductive layer;
forming a plurality of channels in the sacrificial layer;
plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material; and
etching the sacrificial layer to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer is etched. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method comprising:
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forming a copper layer on an inner surface of a substrate;
forming a sacrificial layer comprising silicon over the copper layer;
forming a plurality of channels in the sacrificial layer;
plating the sacrificial layer with copper to substantially fill the plurality of channels; and
etching the sacrificial layer to leave a copper structure having microchannels where the sacrificial layer has been etched, wherein an aspect ratio of width to height of the microchannels is in a range of about 1;
2 to about 1;
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21. A method comprising,
disposing a layer of a first thermally conductive material on a surface of a substrate; -
disposing a sacrificial layer over the thermally conductive material;
forming a plurality of channels in the sacrificial layer;
plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising a second thermally conductive material; and
removing remaining portions of the sacrificial layer to form a thermally conducting structure having fins made of the second conductive material separated by microchannels where the remaining sacrificial layer was removed. - View Dependent Claims (22, 23, 24)
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Specification