Trench insulated gate field effect transistor
First Claim
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1. An insulated gate field effect transistor, comprising:
- a source region of first conductivity type;
a body region of second conductivity type opposite to the first conductivity type adjacent to the source region;
a sub-channel region of second conductivity type adjacent to the body region, wherein the doping in the body region is at least five times higher than the doping in the sub-channel region;
a drain region of first conductivity type adjacent to the sub-channel region, so that body and sub-channel regions are arranged between the source and drain regions;
insulated trenches extending from the source region through the body region and the sub-channel region to the drain region, each trench having sidewalls, and including insulator on the sidewalls, at least one conductive gate electrode adjacent to the body region, and at least one conductive field plate electrode adjacent to the sub-channel region; and
a gate terminal connected to the gate electrodes and a field plate terminal connected to the field plate electrodes to independently control the voltages on the gate electrodes and field plate electrodes.
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Abstract
The invention relates to a trench MOSPET with drain (8), sub-channel region (10) body (12) and source (14). The sub-channel region is doped to be the same conductivity type as the body (12), but of lower doping density. A field plate electrode (34) is provided adjacent to the sub-channel region (10) 10 and a gate electrode (32) next to the body (12).
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Citations
9 Claims
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1. An insulated gate field effect transistor, comprising:
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a source region of first conductivity type;
a body region of second conductivity type opposite to the first conductivity type adjacent to the source region;
a sub-channel region of second conductivity type adjacent to the body region, wherein the doping in the body region is at least five times higher than the doping in the sub-channel region;
a drain region of first conductivity type adjacent to the sub-channel region, so that body and sub-channel regions are arranged between the source and drain regions;
insulated trenches extending from the source region through the body region and the sub-channel region to the drain region, each trench having sidewalls, and including insulator on the sidewalls, at least one conductive gate electrode adjacent to the body region, and at least one conductive field plate electrode adjacent to the sub-channel region; and
a gate terminal connected to the gate electrodes and a field plate terminal connected to the field plate electrodes to independently control the voltages on the gate electrodes and field plate electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. Use of an insulated gate field effect transistor, comprising:
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a source region of first conductivity type;
a body region of second conductivity type opposite to the first conductivity type adjacent to the source region;
a sub-channel region of second conductivity type adjacent to the body region, wherein the doping in the body region is at least five times higher than the doping in the sub-channel region;
a drain region of first conductivity type adjacent to the drift region, so that body and drift regions are arranged between the source and drain regions;
insulated trenches extending from the source region through the body region and into the sub-channel region (10), the trenches having sidewalls, and including insulators on the sidewalls, at least one conductive gate electrode adjacent to the body region and at least one conductive field plate electrode adjacent to the sub-channel region; and
a gate terminal connected to the gate electrodes and a field plate terminal connected to the field plate electrode to independently control the voltages on the gate electrode and field plate electrode, the use comprising the steps of;
applying a voltage to the field plate terminal, the voltage being selected to create an inversion layer in the sub-channel when the transistor is on; and
applying a varying gate voltage to the gate terminal to switch the transistor on and off.
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Specification