METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE, ORGANIC LIGHT-EMITTING DEVICE, AND ELECTRONIC APPARATUS

• US 20070132368A1
• Filed: 11/30/2006
• Published: 06/14/2007
• Est. Priority Date: 12/08/2005
• Status: Abandoned Application

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: YOTSUYA, Shinichi, KUWAHARA, Takayuki
• Application Number:
  US11/565,401
• Publication Number:
  US 20070132368A1
• Time in Patent Office: Days
• US Class Current: 313/503
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/80522 combined with auxiliary electrodes
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

A method for manufacturing an organic light-emitting device includes preparing a substrate on one of the surfaces of which a plurality of individual electrodes is provided; forming frame-shaped partition walls partitioning the individual electrodes; forming organic semiconductor layers inside the respective partition walls, the organic semiconductor layers each containing a luminescent layer; forming a common electrode so that it overlaps the organic semiconductor layers and the partition walls; and forming narrow conductors on the partition walls by a plurality of times of vacuum deposition between the formation of the partition walls and the formation of the common electrode, the narrow conductors having the function to decease the electric resistance of the whole common electrode by contact with the common electrode. In forming the conductors, the conductors are formed in divided micro strip portions connected to each other using the same mask.

Claims

1. A method for manufacturing an organic light-emitting device comprising:

preparing a substrate on one of the surfaces of which a plurality of individual electrodes is provided;

forming frame-shaped partition walls partitioning the individual electrodes;

forming organic semiconductor layers inside the respective partition walls, the organic semiconductor layers each containing a luminescent layer;

forming a common electrode so that it overlaps the organic semiconductor layers and the partition walls; and

forming narrow conductors on the partition walls by a plurality of times of vacuum deposition between the formation of the partition walls and the formation of the common electrode, the narrow conductors having the function to decease the electric resistance of the whole common electrode by contact with the common electrode;

wherein in forming the conductors, the conductors are formed in divided micro strip portions connected to each other using the same mask.

2. The method according to claim 1, wherein the conductors are linear and formed by moving the mask in a direction in which the conductors are formed, at each time of the vacuum deposition.

3. The method according to claim 2, wherein the conductors are formed by forming a plurality of first micro portions to be linearly arranged an then further forming a plurality of second micro portions to connect the ends of the first micro portions.

4. The method according to claim 3, wherein each of the micro portions are widened at both ends thereof.

5. The method according to claim 3, wherein the mask includes a support substrate and a plurality of chips fixed to the support substrate and having apertures corresponding to the respective micro portions, and the support substrate and the chips are composed of materials having substantially the same thermal expansion coefficient.

6. The method according to claim 5, wherein the micro portions are linear and satisfy the relation 2(A+B)<

d1<

D1−

2(A+B) wherein d1 is the width (μ

m) of the apertures, D1 is the width (μ

m) of the partition walls, A is alignment accuracy (μ

m) between the support substrate and the chips, and B is alignment accuracy (μ

m) between the mask and the substrate.

7. The method according to claim 5, wherein the micro portions are linear and satisfy the relation d2>

D2/X+2(A+B) wherein d2 is the length (μ

m) of the apertures, D2 is the length (μ

m) of the conductors, X is the number of partitions D2, A is alignment accuracy (μ

m) between the support substrate and the chips, and B is alignment accuracy (μ

m) between the mask and the substrate.

8. The method according to claim 1, wherein the common electrode is formed using a transparent conductive material, and the conductors are formed using a metal material having a smaller electric resistance than that of the transparent conductive material.

9. An organic light-emitting device manufactured by the method according to claim 1.

10. The organic light-emitting device according to claim 9, wherein the organic light-emitting device is a top-emission structure device including the individual electrodes serving as anodes, and the common electrode serving as a cathode.

11. An electronic apparatus comprising the organic light-emitting device according to claim 9.