EMISSIVE DEVICE, PROCESS FOR PRODUCING EMISSIVE DEVICE, AND ELECTRONIC APPARATUS

• US 20070132381A1
• Filed: 11/07/2006
• Published: 06/14/2007
• Est. Priority Date: 12/08/2005
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Hayashi, Kenji, Yamauchi, Yukio
• Granted Patent: US 8,164,258 B2
• Time in Patent Office: Days
• US Class Current: 313/512
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

An emissive device includes a substrate; a plurality of first electrodes; pixel banks having a plurality of openings each corresponding to the position of a corresponding one of the first electrodes; organic function layers disposed in at least the openings; a second electrode disposed so as to cover the pixel banks and the organic function layers; a first inorganic layer disposed over the second electrode; a second inorganic layer disposed over the first inorganic layer; an organic buffer layer disposed over the second inorganic layer; and a gas barrier layer disposed over the organic buffer layer.

Claims

1. An emissive device comprising:

a substrate;

a plurality of first electrodes;

pixel banks having a plurality of openings each corresponding to the position of a corresponding one of the first electrodes;

organic function layers disposed in at least the openings;

a second electrode disposed so as to cover the pixel banks and the organic function layers;

a first inorganic layer disposed over the second electrode;

a second inorganic layer disposed over the first inorganic layer;

an organic buffer layer disposed over the second inorganic layer; and

a gas barrier layer disposed over the organic buffer layer.

2. The emissive device according to claim 1, wherein the second electrode is composed of a light-transmitting thin metal film and/or a light-transmitting conductive metal oxide film, and the first inorganic layer and the second inorganic layer are each composed of an insulating inorganic compound.

3. The emissive device according to claim 1, wherein the first inorganic layer is composed of a material having a lower elastic modulus than the second inorganic layer.

4. The emissive device according to claim 1, wherein the first inorganic layer is composed of a material having a higher elastic modulus than the organic buffer layer.

5. The emissive device according to claim 1, wherein the first inorganic layer is composed of a material having an elastic modulus of 10 to 100 GPa.

6. The emissive device according to claim 1, wherein the thickness of the first inorganic layer is larger than the thickness of the second inorganic layer and smaller than the thickness of the organic buffer layer.

7. The emissive device according to claim 1, wherein the first inorganic layer completely covers the organic function layers, the pixel banks, and the second electrode and is entirely covered by the gas barrier layer.

8. The emissive device according to claim 1, wherein the first inorganic layer is composed of an inorganic oxide or an alkali halide.

9. The emissive device according to claim 1, wherein the second inorganic layer has substantially the same elastic modulus as the gas barrier layer.

10. The emissive device according to claim 1, wherein the organic buffer layer is composed of an epoxy resin.

11. The emissive device according to claim 1, wherein the contact angle defined by the surface of the organic buffer layer at each end of the organic buffer layer and a surface of the second inorganic layer is 20°

or less.

18. An electronic apparatus including the emissive device according to claim 1.

12. A process for producing an emissive device, comprising:

forming a plurality of first electrodes on a substrate;

forming pixel banks having a plurality of openings each corresponding to the position of a corresponding one of the first electrodes;

forming organic function layers in at least the openings;

forming a second electrode in such a manner that the second electrode covers the pixel banks and the organic function layers;

forming a first inorganic layer over the second electrode;

forming a second inorganic layer over the first inorganic layer;

forming an organic buffer layer over the second inorganic layer; and

forming a gas barrier layer over the organic buffer layer.

13. The process for producing an emissive device according to claim 12, wherein the first inorganic layer is composed of a material having a lower elastic modulus than the second inorganic layer.

14. The process for producing an emissive device according to claim 12, wherein the first inorganic layer is composed of a material having a higher elastic modulus than the organic buffer layer.

15. The process for producing an emissive device according to claim 12, wherein the first inorganic layer is composed of a material having an elastic modulus of 10 to 100 GPa.

16. The process for producing an emissive device according to claim 12, wherein the first inorganic layer and the second inorganic layer are successively formed in the same film-forming apparatus.

17. The process for producing an emissive device according to claim 12, wherein the organic buffer layer is formed by screen printing under a reduced-pressure atmosphere.