Exposure apparatus and method for producing device

• US 20070132968A1
• Filed: 02/09/2007
• Published: 06/14/2007
• Est. Priority Date: 05/23/2003
• Status: Active Grant

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Owa, Soichi, Mizuno, Yasushi, Tanimoto, Akikazu, Nakano, Katsushi, Kobayashi, Naoyuki, Shiraishi, Kenichi
• Granted Patent: US 8,134,682 B2
• Time in Patent Office: Days
• US Class Current: 355/30
• CPC Class Codes: G03B 27/52 Details
• CPC Class Codes: G03F 7/00 Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using photoresist structures for special production processes, see the relevant places, e.g. B44C, H01L, e.g. H01L21/00, H05K
• CPC Class Codes: G03F 7/2041 in the presence of a fluid, e.g. immersion; using fluid cooling means
• CPC Class Codes: G03F 7/70316 Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/70775 Position control, e.g. interferometers or encoders for determining the stage position
• CPC Class Codes: G03F 7/7085 Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
• CPC Class Codes: G03F 7/70916 Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
• CPC Class Codes: G03F 7/70925 Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
• CPC Class Codes: G03F 7/70958 Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
• CPC Class Codes: G03F 9/7015 Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
• CPC Class Codes: G03F 9/7096 Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus

Abstract

A lens cleaning module is provided for a lithography system having an exposure apparatus including an objective lens. The system includes a scanning stage for supporting a wafer beneath the objective lens. A cleaning module coupling with the lithography system is provided for cleaning the objective lens in a non-manual cleaning process.

Claims

1. A lens cleaning module for a lithography system having an exposure apparatus including an objective lens, comprising:

a scanning stage for supporting a wafer beneath the objective lens; and

a cleaning module coupling with said lithography system is provided for cleaning the objective lens in a non-manual cleaning process.

2. The lens-cleaning module of claim 1, wherein said cleaning module comprises a supply system providing cleaning fluid.

3. The lens-cleaning module of claim 1, wherein said cleaning module comprises a part collecting or removing the used cleaning fluid.

4. The lens-cleaning module of claim 3, further comprising a heating/drying module associated with said cleaning module for drying the objective lens.

5. The lens cleaning module of claim 1, wherein said lithography system is an immersion lithography apparatus.

6. The lens-cleaning module of claim 1, wherein said exposure apparatus has a light source which emits light having a wavelength of less than about 250 nm.

7. The lens-cleaning module of claim 1, wherein said objective lens has an NA of greater than about 0.75.

8. The lens-cleaning module of claim 1, wherein said cleaning module comprises a fluid retaining wall carried by said scanning stage and a cleaning fluid provided on said scanning stage and retained by said fluid retaining wall for contacting the objective lens.

9. The lens-cleaning module of claim 1, wherein said cleaning fluid is isopropyl alcohol, acetone or an inert solvent devoid of fluorine.

10. The lens-cleaning module of claim 1, wherein said cleaning module utilizes a distribution mechanism for distributing said cleaning fluid on the objective lens.

11. The lens-cleaning module of claim 8, further comprising a contact material for cleaning and cleaning fluid is distributed between contact material and lens during operation.

12. The lens-cleaning module of claim 8, further comprising a collecting system for collecting said cleaning fluid.

13. A method for patterning semiconductor wafers by immersion lithography to improve exposure quality comprising the steps of:

loading a semiconductor wafer on a stage of an immersion lithography apparatus;

filling a liquid between said wafer and an objective lens of said immersion lithography apparatus;

exposing said semiconductor wafer to a light source having a wavelength of less than about 250 nm;

unloading said semiconductor wafer;

cleaning a surface of said objective lens after said exposure step utilizing a non-manual lens cleaning module.

14. The method for patterning semiconductor wafer by immersion lithography according to claim 13, wherein said non-manual lens cleaning module further comprising a cleaning fluid distribution system.

15. The method for patterning semiconductor wafer by immersion lithography according to claim 13, wherein said non-manual lens cleaning module further comprising a cleaning fluid removing/collecting system.

16. The method for patterning semiconductor wafer by immersion lithography according to claim 13, wherein said non-manual lens cleaning module further comprising a contact material for cleaning and cleaning fluid is distributed between contact material and lens during cleaning operation.

17. A method for patterning semiconductor wafers by immersion lithography to improve exposure quality comprising the steps of:

utilizing a non-manual lens cleaning module to clean the surface of objective lens before water exposure processing;

loading a semiconductor wafer on a stage of an immersion lithography apparatus;

filling a liquid between said wafer and an objective lens of said immersion lithography apparatus;

exposing said semiconductor wafer to a light source having a wavelength of less than about 250 nm.

18. The method for patterning semiconductor wafer by immersion lithography according to claim 17, wherein said non-manual lens cleaning module further comprising a cleaning fluid distribution system.

19. The method for patterning semiconductor wafer by immersion lithography according to claim 17, wherein said non-manual lens cleaning module further comprising a cleaning fluid removing/collecting system.

20. The method for patterning semiconductor wafer by immersion lithography according to claim 17, wherein said non-manual lens cleaning module further comprising a contact material for cleaning and cleaning fluid is distributed between contact material and lens during cleaning operation.