Method of manufacturing vertical gallium nitride based light emitting diode
First Claim
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1. A method of manufacturing a vertical GaN-based LED comprising:
- forming a nitride-based buffer layer on a silicon substrate;
sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer;
forming an n-electrode on the n-type GaN layer;
forming a plating seed layer on the n-electrode;
forming a structure supporting layer on the plating seed layer;
removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and
forming a p-electrode on the p-type GaN layer having the roughness formed.
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Abstract
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
129 Citations
12 Claims
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1. A method of manufacturing a vertical GaN-based LED comprising:
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forming a nitride-based buffer layer on a silicon substrate;
sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer;
forming an n-electrode on the n-type GaN layer;
forming a plating seed layer on the n-electrode;
forming a structure supporting layer on the plating seed layer;
removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and
forming a p-electrode on the p-type GaN layer having the roughness formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electro-Mechanics Co., Ltd. (Samsung Group)
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InventorsCho, Hyun, Lee, Jung, Kim, Dae, Ro, Jae, Lee, Jae
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/46
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CPC Class CodesH01L 21/02381 Silicon, silicon germanium,...H01L 21/02458 NitridesH01L 21/0254 NitridesH01L 33/007 comprising nitride compoundsH01L 33/22 Roughened surfaces, e.g. at...
