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A STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE SAME

  • US 20070134855A1
  • Filed: 06/22/2006
  • Published: 06/14/2007
  • Est. Priority Date: 12/09/2005
  • Status: Active Grant
First Claim
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1. A method for fabricating a non-volatile memory device comprising a plurality of bitline layers and a plurality of word line layers sequentially formed on top of each other, the method comprising forming a first bitline layer, wherein forming a first bitline layer comprises:

  • forming a semiconductor layer on a insulator;

    patterning and etching the semiconductor layer to form a plurality of bitlines;

    forming a first word line layer over the first bitline layer, wherein forming the first word line layer comprises;

    sequentially forming a first trapping structure, a conducting layer and a second trapping structure; and

    patterning and etching the first and second trapping structures and the conducting layer to form a plurality of word lines.

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