Integrated circuit having bond pad with improved thermal and mechanical properties
First Claim
1. An integrated circuit including active circuitry and at least one bond pad, the at least one bond pad comprising:
- a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and
a capping layer, the capping layer formed over at least a portion of the metallization layer and in electrical contact with the metallization layer;
wherein the capping layer is patterned such that it comprises one or more grooves.
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Accused Products
Abstract
An integrated circuit includes active circuitry and at least one bond pad. The at least one bond pad, in turn, comprises a metallization layer and a capping layer having one or more grooves. The metallization layer is in electrical contact with at least a portion of the active circuitry. In addition, the capping layer is formed over at least a portion of the metallization layer and is in electrical contact with the metallization layer. The grooves in the capping layer may be located only proximate to the edges of the bond pad or may run throughout the bond pad depending on the application.
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Citations
20 Claims
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1. An integrated circuit including active circuitry and at least one bond pad, the at least one bond pad comprising:
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a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and
a capping layer, the capping layer formed over at least a portion of the metallization layer and in electrical contact with the metallization layer;
wherein the capping layer is patterned such that it comprises one or more grooves. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An integrated circuit mounted in an integrated circuit package, the integrated circuit including active circuitry and a bond pad, wherein the bond pad comprises:
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a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and
a capping layer, the capping layer formed over at least a portion of the metallization layer and in electrical contact with the metallization layer;
wherein the capping layer is patterned such that it comprises one or more grooves. - View Dependent Claims (18, 19)
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20. A method of forming a bond pad in an integrated circuit including active circuitry, the method comprising the steps of:
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forming a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and
forming a capping layer over at least a portion of the metallization layer and in electrical contact with the metallization layer;
wherein the capping layer is patterned such that it comprises one or more grooves.
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Specification