SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF FABRICATING THE SAME

• US 20070138489A1
• Filed: 11/21/2006
• Published: 06/21/2007
• Est. Priority Date: 11/25/2005
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Bousquet, Valerie, Hooper, Stewart
• Application Number:
  US11/562,141
• Publication Number:
  US 20070138489A1
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A semiconductor light-emitting device is fabricated in a nitride materials system and has an active region comprising two or more quantum well layers. Each quantum well layer is separated from a neighbouring quantum well layer by a respective barrier layer. The or each barrier layer has a thickness that is at least 13 times as great as the thickness of any one of the quantum well layers. This increases the output power of the device.

Claims

1. A semiconductor light-emitting device fabricated in a nitride materials system and having an active region comprising two or more quantum well layers, each quantum well layer being separated from a neighbouring quantum well layer by a respective barrier layer;

wherein the or each barrier layer has a thickness that is at least 13 times as great as the thickness of any one of the quantum well layers.

2. A device as claimed in claim 1 wherein the semiconductor light-emitting device is fabricated in the (Al, Ga, In)N materials system whereby each quantum well layer is an (Al, Ga, In)N layer and the or each barrier layer is an (Al, Ga, In)N layer.

3. A device as claimed in claim 2 wherein each quantum well layer is an InGaN layer.

4. A device as claimed in claim 2 wherein the or each barrier layer is an InGaN layer.

5. A device as claimed in claim 3 wherein the or each barrier layer is an InGaN layer and wherein the indium mole fraction of the or each barrier layer is less than the indium mole fraction of each quantum well layer.

6. A device as claimed in claim 2 wherein the or each barrier layer is a GaN layer.

7. A device as claimed in claim 1 wherein the or each barrier layer has a thickness that is up to 30 times as great as the thickness of any one of quantum well layers.

8. A device as claimed in claim 1 wherein each quantum well layer has a thickness of greater than 1 nm.

9. A device as claimed in claim 1 wherein each quantum well layer has a thickness of less than 20 nm.

10. A device as claimed in claim 1 wherein the or each barrier layer has a thickness of greater than 8 nm.

11. A device as claimed in claim 1 wherein the or each barrier layer has a thickness of less than 50 nm.

12. A device as claimed in claim 1 wherein each quantum well layer is doped.

13. A device as claimed in claim 1 wherein the or each barrier layer is doped.

14. A device as claimed in claim 1 and comprising a semiconductor laser device.

15. A device as claimed in claim 1 and comprising a semiconductor light-emitting diode.

16. A method of fabricating a semiconductor light-emitting device in a nitride materials system, the method comprising the steps of:

a) growing a first quantum well layer;

b) growing a first barrier layer over the first quantum well layer; and

c) growing a second quantum well layer over the first barrier layer;

wherein the first barrier layer has a thickness that is at least 13 times as great as the thickness of any one of the quantum well layers.

17. A method as claimed in claim 16 and further comprising:

d) growing a second barrier layer over the second quantum well layer; and

e) growing a third quantum well layer over the second barrier layer;

wherein the second barrier layer has a thickness that is at least 13 times as great as the thickness of any one of the quantum well layers.

18. A method as claimed in claim 16 and comprising annealing the first barrier layer before step (c) of growing the second quantum well layer.

19. A method as claimed in claim 16 and comprising annealing the second barrier layer before step (e) of growing the third quantum well layer.