FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT
First Claim
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1. A field plate trench transistor having a semiconductor body comprising:
- a trench structure; and
an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and
a voltage divider provided in and/or on the semiconductor body, the voltage divider being electrically connected to the field electrode structure or integrated into the latter, the voltage divider being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials.
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Abstract
A field plate trench transistor having a semiconductor body is disclosed. In one embodiment, the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
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Citations
20 Claims
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1. A field plate trench transistor having a semiconductor body comprising:
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a trench structure; and
an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and
a voltage divider provided in and/or on the semiconductor body, the voltage divider being electrically connected to the field electrode structure or integrated into the latter, the voltage divider being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for producing a field plate trench transistor, comprising:
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forming a trench structure; and
providing an insulation structure lining the trench structure, the remaining free space within the trench structure extending downward toward the semiconductor body;
filling the free space by alternately depositing n- and p-doped semiconducting material and metal-containing material;
orfilling the free space by repeatedly depositing a layer made of semiconducting material of the first conduction type, carrying out a coating process in order to form a zone of the second conduction type in the previously deposited layer, and producing a silicide layer on the previously-formed zone of the second conduction type. - View Dependent Claims (19)
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20. A field plate trench transistor having a semiconductor body comprising:
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a trench structure; and
means for providing an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure means and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and
means for providing a voltage divider in and/or on the semiconductor body, the voltage divider means being electrically connected to the field electrode structure or integrated into the latter, the voltage divider means being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials.
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Specification