SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor region of the first conduction type;
a first main electrode connected to said semiconductor region;
a base region of the second conduction type formed on said semiconductor region;
a diffused region of the first conduction type formed on said base region;
a second main electrode connected to said diffused region and said base region;
a first trench formed extending from a surface of said diffused region to said semiconductor region;
a second trench formed from said first trench much deeper than said first trench;
a gate electrode formed on a side of said first trench via a first insulator film; and
a protruded electrode formed in said second trench via a second insulator film as protruded downward lower than said gate electrode.
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Abstract
A semiconductor device comprises a semiconductor region of the first conduction type. A first main electrode is connected to the semiconductor region. A base region of the second conduction type is formed on the semiconductor region. A diffused region of the first conduction type is formed on the base region. A second main electrode is connected to the diffused region and the base region. A first trench is formed extending from a surface of the diffused region to the semiconductor region. A second trench is formed from the first trench deeper than the first trench. A gate electrode is formed on a side of the first trench via a first insulator film. A protruded electrode is formed in the second trench via a second insulator film as protruded lower than the gate electrode.
49 Citations
16 Claims
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1. A semiconductor device, comprising:
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a semiconductor region of the first conduction type;
a first main electrode connected to said semiconductor region;
a base region of the second conduction type formed on said semiconductor region;
a diffused region of the first conduction type formed on said base region;
a second main electrode connected to said diffused region and said base region;
a first trench formed extending from a surface of said diffused region to said semiconductor region;
a second trench formed from said first trench much deeper than said first trench;
a gate electrode formed on a side of said first trench via a first insulator film; and
a protruded electrode formed in said second trench via a second insulator film as protruded downward lower than said gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device, comprising:
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forming on a semiconductor region of the first conduction type a base region of the second conduction type;
forming a first trench through said base region to a depth reaching said semiconductor region;
thermally oxidizing the entire surfaces of said first trench and said base region to form an insulator film;
depositing a conductive film over a surface of said insulator film;
anisotropically etching said conductive film to leave said conductive film only on a side of said first trench;
forming a second trench in a central region at the bottom of said first trench, said second trench extending much deeper than said first trench;
thermally oxidizing the surfaces of said conductive film left after said anisotropic etching and said second trench to form an insulator film; and
depositing a conductive film over a surface of said insulator film formed in said second trench. - View Dependent Claims (13, 14, 15, 16)
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Specification