MICROELECTROMECHANICAL SYSTEM PRESSURE SENSOR AND METHOD FOR MAKING AND USING
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Abstract
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
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Citations
23 Claims
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1-21. -21. (canceled)
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22. A method, comprising:
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providing a voltage level to at least one of (i) a conducting portion associated with a wafer having a substantially flat surface defining a plane, the wafer having an insulating layer on the surface, and the insulating layer having a cavity proximate to the conducting portion and (ii) a conducting diaphragm bonded to the insulating layer, the conducing diaphragm covering the cavity and being substantially parallel to the plane; and
measuring pressure based at least in part on capacitance between the conducting portion and the conducting diaphragm.
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23-24. -24. (canceled)
Specification