Photo sensor and organic light-emitting display using the same

• US 20070138951A1
• Filed: 12/20/2006
• Published: 06/21/2007
• Est. Priority Date: 12/21/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Lee, Eun, Park, Hye, Choi, Byoung, Oh, Youn, Kang, Won, Yang, Sun
• Granted Patent: US 8,477,125 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H01L 27/144 Devices controlled by radiation
• CPC Class Codes: H01L 31/145 the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
• CPC Class Codes: H01L 31/153 formed in, or on, a common substrate
• CPC Class Codes: H01L 31/1872 Recrystallisation
• CPC Class Codes: H10K 59/13 comprising photosensors that control luminance
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.

Claims

1. A photo sensor comprising a plurality of photo diodes connected to one another in parallel.

2. The photo sensor as claimed in claim 1, wherein each photo diode is a PIN photo diode.

3. The photo sensor as claimed in claim 2, wherein each PIN photo diode includes an intrinsic region between an N-type doping region and a P-type doping region.

4. The photo sensor as claimed in claim 1, wherein each photo diode is a PN diode.

5. The photo sensor as claimed in claim 4, wherein each PN photo diode includes an N-type doping region adjacent to a P-type doping region, wherein the N-type doping region and the P-type doping region are on a same plane.

6. The photo sensor as claimed in claim 1, wherein the plurality of photo diodes are capable of absorbing external light and outputting a corresponding electric signal.

7. An organic light-emitting display, comprising:

a substrate having a pixel region and a non-pixel region;

a thin film transistor on the substrate;

an organic light-emitting diode electrically connected to the thin film transistor; and

a photo sensor having a plurality of photo diodes connected to one another in parallel.

8. The organic light-emitting display as claimed in claim 7, wherein the photo sensor is positioned on the non-pixel region of the substrate.

9. The organic light-emitting display as claimed in claim 7, wherein the photo sensor is capable of receiving light from the organic light-emitting diode and generate a corresponding electric signal.

10. The organic light-emitting display as claimed in claim 7, wherein the plurality of photo diodes are capable of absorbing external light and outputting a corresponding electric signal.

11. The organic light-emitting display as claimed in claim 7, wherein each photo diode is a PIN photo diode.

12. The organic light-emitting display as claimed in claim 10, wherein each PIN photo diode includes an intrinsic region between an N-type doping region and a P-type doping region.

13. The organic light-emitting display as claimed in claim 7, wherein each photo diode is a PN diode.

14. The organic light-emitting display as claimed in claim 13, wherein each PN photo diode includes an N-type doping region adjacent to a P-type doping region.

15. A portable electronic apparatus, comprising an organic light-emitting display device having a substrate, a thin film transistor, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.