Group III nitride based compound semiconductor device and producing method for the same

• US 20070141753A1
• Filed: 12/05/2006
• Published: 06/21/2007
• Est. Priority Date: 12/06/2005
• Status: Abandoned Application

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Uemura, Toshiya, Horiuchi, Shigemi
• Application Number:
  US11/633,623
• Publication Number:
  US 20070141753A1
• Time in Patent Office: Days
• US Class Current: 438/113
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

The present invention relates to method for producing a group III nitride based compound semiconductor device, including separating the device into individual chips by means of a dicing blade. A portion of an epitaxial layer where a dicing blade is to be positioned is partially or totally removed through etching, to thereby form a trench. An insulating film is formed on the bottom and on the side surfaces of the trench. A wafer is diced into chips in such a manner that the bottom of the trench is removed by means of the dicing blade without completely removing the side surfaces of the insulating film. The insulting film is formed on the side surfaces of the trench such that the film covers a p-type layer to an n-type layer included in group III nitride based compound semiconductor layers so as to prevent short circuit between the p-type layer and the n-type layer.

Claims

1. A method for producing a group III nitride based compound semiconductor device, including separating the device into individual chips by means of a dicing blade, the method comprising:

a portion of an epitaxial layer where a dicing blade is to be positioned is partially or totally removed through etching, to thereby form a trench;

forming insulating film on the bottom and on the side surfaces of the trench; and

performing dicing in such a manner that the bottom of the trench is removed by means of the dicing blade without completely removing the side surfaces of the insulating film,

wherein the insulting film is formed on the side surfaces of the trench such that the film covers a p-type layer to an n-type layer included in group III nitride based compound semiconductor layers so as to prevent short circuit between the p-type layer and the n-type layer.

2. A method for producing a group III nitride based compound semiconductor device as described in claim 1, wherein the etching and formation of the insulating film is carried out from one conduction-type layer of the group III nitride based compound semiconductor device, and the dicing by means of the dicing blade is carried out from the other conduction-type layer of the same device.

3. A method for producing a group III nitride based compound semiconductor device as described in claim 2, wherein, before dicing through operation of the dicing blade, the method further comprises:

forming, on the first substrate, a group III nitride based compound semiconductor device;

forming an electrode on the uppermost layer of the device;

forming the trench;

forming the insulating film;

bonding a conductive second substrate, directly or by the mediation of a conductive film or a conductive multi-layer film, to the electrode-formed surface of the group III nitride based compound semiconductor device formed on the first substrate;

removing the first substrate from the bonded structure; and

forming an electrode on a newly exposed layer of the group III nitride based compound semiconductor device.

4. A group III nitride based compound semiconductor device, which comprises:

a conductive substrate,

a first electrode joined to the conductive substrate directly or by the mediation of a conductive film or a conductive multi-layer film,

a group III nitride based compound semiconductor device layer in which at least a first conduction-type layer joined to the first electrode and a second conduction-type layer having a conduction type differing that of the first-conduction type layer are stacked,

a second electrode formed on the surface of the group III nitride based compound semiconductor device layer opposite the surface on which the first electrode has been formed, and

an insulating film extending along and proximal to the outer periphery of the device and formed so as to cover the side surfaces of the layers having an opposite conduction type and being included in the group III nitride compound semiconductor device layer.