Transistor structures and methods for making the same
First Claim
1. A method for making an enhancement mode, field effect transistor comprising:
- depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and
annealing the ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere.
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Accused Products
Abstract
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
135 Citations
20 Claims
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1. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and
annealing the ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 13, 15, 16, 17, 18, 19, 20)
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10. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and
treating the ZnO or SnO2 such that the treated ZnO or SnO2 has a higher resistivity and a lower oxygen vacancy concentration relative to the untreated ZnO or SnO2. - View Dependent Claims (12, 14)
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Specification