Method of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors
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Abstract
The invention includes methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors. In one implementation, conductive metal silicide is formed on some areas of a substrate and not on others. In one implementation, conductive metal silicide is formed on a transistor source/drain region and which is spaced from an anisotropically etched sidewall spacer proximate a gate of the transistor.
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Citations
82 Claims
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1-70. -70. (canceled)
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71. A method of forming a field effect transistor, comprising:
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forming a gate electrode of a field effect transistor over a silicon-comprising substrate, the gate electrode comprising a sidewall;
forming a first electrically insulative anisotropically etched sidewall spacer over the sidewall of the gate electrode;
forming a second anisotropically etched sidewall spacer over and distinct from the first sidewall spacer;
depositing metal over the first and second sidewall spacers and over silicon of a source/drain region of the transistor proximate the second sidewall spacer; and
annealing the substrate effective to react the metal with silicon of the substrate to form an electrically conductive metal silicide on the source/drain region which is spaced from the first sidewall spacer. - View Dependent Claims (72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82)
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Specification