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Methods of fabricating isolation regions of semiconductor devices and structures thereof

  • US 20070141852A1
  • Filed: 12/20/2005
  • Published: 06/21/2007
  • Est. Priority Date: 12/20/2005
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:

  • providing a workpiece, the workpiece having a top surface;

    forming at least one trench in the workpiece, the at least one trench comprising sidewalls and a bottom surface;

    forming a thin nitride liner over the sidewalls and the bottom surface of the at least one trench and over the top surface of the workpiece using atomic layer deposition (ALD);

    depositing an insulating material over the top surface of the workpiece, filling the at least one trench with the insulating material; and

    removing at least a portion of the insulating material from over the top surface of the workpiece, wherein after removing the at least a portion of insulating material from over the top surface of the workpiece, the thin nitride liner in the at least one trench is at least coplanar with the top surface of the workpiece, and wherein the thin nitride liner and the insulating material form an isolation region of the semiconductor device.

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