Power loss recovery for bit alterable memory
First Claim
1. A method comprising:
- providing a direction bit and at least two register bits for a plurality of cell colonies in a bit alterable memory; and
determining a programming state of the plurality of cell colonies based on the direction bit and the register bits.
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Accused Products
Abstract
A bit alterable memory device may include status bits such as a direction bit and two register bits for a colony of memory cells. The state of each status bit may be changed depending on the programming state of the non-volatile bit alterable memory. The status bits may be examined to determine the write status of two separate colonies of memory cells in the event of a power loss. The information gathered from the status bits can be used by a power loss recovery mechanism to determine whether the data written to a plurality of memory cell colonies is partially written. Applying a power loss recovery mechanism to a bit alterable memory can prevent the user from relying on data that is corrupt or otherwise unusable.
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Citations
26 Claims
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1. A method comprising:
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providing a direction bit and at least two register bits for a plurality of cell colonies in a bit alterable memory; and
determining a programming state of the plurality of cell colonies based on the direction bit and the register bits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An article comprising a medium storing instructions that enable a system to:
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provide a direction bit and at least two register bits for a plurality of cell colonies in a bit-alterable memory; and
determining a programming state of the plurality of cell colonies based on the direction bit and the register bits. - View Dependent Claims (15, 16)
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17. A system comprising:
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a bit alterable memory comprising a plurality of cell colonies having at least one direction bit and at least two register bits;
a processor that communicates with the bit alterable memory through a transmission path; and
an antennae coupled to the transmission path. - View Dependent Claims (18, 19)
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20. A bit alterable memory comprising:
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a plurality of cell colonies having at least one direction bit and at least two register bits; and
an interface to determine the programming state of the plurality of cell colonies after a power loss using the direction and the register bits. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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Specification