Semiconductor acceleration sensor and fabrication method thereof
First Claim
1. A semiconductor acceleration sensor comprising:
- a fixed portion having a first thickness;
a weight portion surrounding the fixed portion from a periphery;
a beam portion having the first thickness, and connecting the fixed portion and the weight portion such that the weight portion can displace with respect to the fixed portion; and
a piezo element formed at the beam portion.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor acceleration sensor chip has a fixed portion having a first thickness, a weight portion surrounding the fixed portion from a periphery, a beam portion having the first thickness and connecting the fixed portion and the weight portion such that the weight portion can displace with respect to the fixed portion, and a piezo element formed at the beam portion. The fixed portion is fastened to a lower container having a pedestal portion which projects-out at a center of a bottom surface of a cavity. In accordance with the above-described structure, there are provided a semiconductor acceleration sensor and method of manufacture thereof which can realize simplification of manufacturing processes and prevention of a decrease in yield, without a sensor sensitivity decreasing.
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Citations
18 Claims
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1. A semiconductor acceleration sensor comprising:
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a fixed portion having a first thickness;
a weight portion surrounding the fixed portion from a periphery;
a beam portion having the first thickness, and connecting the fixed portion and the weight portion such that the weight portion can displace with respect to the fixed portion; and
a piezo element formed at the beam portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor acceleration sensor, comprising:
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a step of readying a semiconductor acceleration substrate having a first electrode pad formed at a first region at a top surface, a piezo element formed at a second region which is at a periphery of the first region at the top surface, and a wiring pattern electrically connecting the first electrode pad and the piezo element;
a step of excavating, from a reverse surface, the first region and the second region at the semiconductor substrate, such that a first thickness remains; and
a step of individuating the semiconductor substrate at an end of a third region which surrounds the second region. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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12. A method of manufacturing a semiconductor acceleration sensor, comprising:
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a step of readying a semiconductor acceleration substrate having a first electrode pad formed at a first region at a top surface, a piezo element formed at a second region which is at a periphery of the first region at the top surface, and a wiring pattern electrically connecting the first electrode pad and the piezo element;
a step of excavating, from a reverse surface, the first region and the second region and a third region which is at a periphery of the second region at the semiconductor substrate, such that a first thickness remains; and
a step of individuating the semiconductor substrate at an end of a fourth region which is at a periphery of the third region.
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Specification