Semiconductor acceleration sensor and fabrication method thereof

• US 20070144259A1
• Filed: 11/29/2006
• Published: 06/28/2007
• Est. Priority Date: 12/01/2005
• Status: Abandoned Application

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Inventors: Ino, Yoshihiko
• Application Number:
  US11/605,366
• Publication Number:
  US 20070144259A1
• Time in Patent Office: Days
• US Class Current: 73/514.330
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Abstract

A semiconductor acceleration sensor chip has a fixed portion having a first thickness, a weight portion surrounding the fixed portion from a periphery, a beam portion having the first thickness and connecting the fixed portion and the weight portion such that the weight portion can displace with respect to the fixed portion, and a piezo element formed at the beam portion. The fixed portion is fastened to a lower container having a pedestal portion which projects-out at a center of a bottom surface of a cavity. In accordance with the above-described structure, there are provided a semiconductor acceleration sensor and method of manufacture thereof which can realize simplification of manufacturing processes and prevention of a decrease in yield, without a sensor sensitivity decreasing.

Claims

1. A semiconductor acceleration sensor comprising:

a fixed portion having a first thickness;

a weight portion surrounding the fixed portion from a periphery;

a beam portion having the first thickness, and connecting the fixed portion and the weight portion such that the weight portion can displace with respect to the fixed portion; and

a piezo element formed at the beam portion.

2. The semiconductor acceleration sensor of claim 1, wherein the weight portion includes an inner peripheral portion, which has the first thickness and is directly connected to the beam portion, and an outer peripheral portion, which has a second thickness thicker than the first thickness and which is formed around the inner peripheral portion.

3. The semiconductor acceleration sensor of claim 1, wherein

at least two of the beam portions connect the fixed portion and the weight portion, and

a plurality of the piezo elements are formed at each of the beam portions.

4. The semiconductor acceleration sensor of claim 1, wherein

the beam portion is formed at an entirety between the fixed portion and the weight portion, and

a plurality of the piezo elements are formed along a circle whose center is the fixed portion.

5. The semiconductor acceleration sensor of claim 1, wherein a boundary between the outer peripheral portion and the inner peripheral portion is circular.

6. The semiconductor acceleration sensor of claim 1, wherein a plurality of the piezo elements are formed along an axis passing through a center of the fixed portion.

7. The semiconductor acceleration sensor of claim 1, further comprising:

a first electrode pad formed at the fixed portion; and

a wiring pattern electrically connecting the first electrode pad and the piezo element.

8. The semiconductor acceleration sensor of claim 1, further comprising:

a package having a cavity which accommodates the fixed portion and the beam portion and the weight portion, and a pedestal portion which projects-out from a predetermined surface of the cavity,

wherein the fixed portion is fastened to a top surface of the pedestal portion.

9. The semiconductor acceleration sensor of claim 1, further comprising:

a package having a cavity which accommodates the fixed portion and the beam portion and the weight portion; and

a control circuit having a second electrode pad electrically connected to the piezo element, a bottom surface of the control circuit being fastened to a center of a predetermined surface of the cavity,

wherein the fixed portion is fastened to a top surface of the control circuit.

10. The semiconductor acceleration sensor of claim 3, further comprising:

a first electrode pad formed at the fixed portion;

a wiring pattern electrically connecting the first electrode pad and the piezo elements;

a package having a cavity which accommodates the fixed portion and the beam portions and the weight portion;

a control circuit having a second electrode pad, a bottom surface of the control circuit being fastened to a center of a predetermined surface of the cavity; and

a wire passing through between the fixed portion and the weight portion and between the beam portions which are adjacent, and electrically connecting the first electrode pad and the second electrode pad,

wherein the fixed portion is fastened to a top surface of the control circuit.

11. A method of manufacturing a semiconductor acceleration sensor, comprising:

a step of readying a semiconductor acceleration substrate having a first electrode pad formed at a first region at a top surface, a piezo element formed at a second region which is at a periphery of the first region at the top surface, and a wiring pattern electrically connecting the first electrode pad and the piezo element;

a step of excavating, from a reverse surface, the first region and the second region at the semiconductor substrate, such that a first thickness remains; and

a step of individuating the semiconductor substrate at an end of a third region which surrounds the second region.

13. The method of manufacturing a semiconductor acceleration sensor of claim 11, wherein the semiconductor substrate is excavated from the reverse surface such that an opening configuration is circular.

14. The method of manufacturing a semiconductor acceleration sensor of claim 11, further comprising a step of forming at least two beam portions which connect the first region and the third region, by forming through-holes in at least two regions at the second region.

15. The method of manufacturing a semiconductor acceleration sensor of claim 14, wherein the through-holes are formed at positions where a plurality of the piezo elements are provided at each of the beam portions.

16. The method of manufacturing a semiconductor acceleration sensor of claim 11, wherein a plurality of the piezo elements are formed along a circle whose center is the first region.

17. The method of manufacturing a semiconductor acceleration sensor of claim 11, further comprising:

a step of readying a package having a cavity, and a pedestal portion projecting-out from a predetermined surface of the cavity; and

a step of fastening the first region, at the semiconductor substrate which has been individuated, to a top surface of the pedestal portion.

18. The method of manufacturing a semiconductor acceleration sensor of claim 11, further comprising:

a step of readying a package having a cavity;

a step of readying a control circuit which is electrically connected to the semiconductor substrate and which has a predetermined thickness;

a step of fastening a bottom surface of the control circuit to a predetermined surface of the cavity; and

a step of fastening the first region, at the semiconductor substrate which has been individuated, to a top surface of the control circuit.

12. A method of manufacturing a semiconductor acceleration sensor, comprising:

a step of readying a semiconductor acceleration substrate having a first electrode pad formed at a first region at a top surface, a piezo element formed at a second region which is at a periphery of the first region at the top surface, and a wiring pattern electrically connecting the first electrode pad and the piezo element;

a step of excavating, from a reverse surface, the first region and the second region and a third region which is at a periphery of the second region at the semiconductor substrate, such that a first thickness remains; and

a step of individuating the semiconductor substrate at an end of a fourth region which is at a periphery of the third region.