LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES
First Claim
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1. A light emitting device, comprising:
- an active region comprising semiconductor material;
a first metal contact on the active region, the first metal contact having a first face adjacent the active region and a second face remote from the active region and being configured such that photons emitted by the active region pass through the first metal contact from the first face to the second face;
a photon absorbing bond pad on the second face of the first metal contact, remote from the first face, the bond pad having an area less than the area of the first metal contact;
a reduced conduction region disposed in the active region beneath the bond pad, spaced-apart from the bond pad by the first metal contact and configured to reduce current flow through the active region in the region beneath the first metal contact that is beneath the bond pad; and
a second metal contact electrically coupled to the active region.
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Abstract
Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced conduction region in an active region of the device. The current blocking mechanism could be a damage region of a layer on which a contact is formed. The current blocking mechanism could be a Schottky contact between an ohmic contact and the active region of the device. A semiconductor junction, such as a PN junction could also be provided between the ohmic contact and the active region.
75 Citations
14 Claims
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1. A light emitting device, comprising:
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an active region comprising semiconductor material;
a first metal contact on the active region, the first metal contact having a first face adjacent the active region and a second face remote from the active region and being configured such that photons emitted by the active region pass through the first metal contact from the first face to the second face;
a photon absorbing bond pad on the second face of the first metal contact, remote from the first face, the bond pad having an area less than the area of the first metal contact;
a reduced conduction region disposed in the active region beneath the bond pad, spaced-apart from the bond pad by the first metal contact and configured to reduce current flow through the active region in the region beneath the first metal contact that is beneath the bond pad; and
a second metal contact electrically coupled to the active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification