×

Trench polysilicon diode

  • US 20070145411A1
  • Filed: 12/28/2005
  • Published: 06/28/2007
  • Est. Priority Date: 12/28/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a vertical trench polysilicon diode comprising:

  • forming a N−

    (P−

    ) type epitaxial region on N+ (P+) type substrate;

    forming a trench in said epitaxial region;

    forming an insulating layer in said trench;

    filling said trench with polysilicon forming a top surface of said trench;

    implanting a P+ (N+) type dopant, forming a P+ (N+) type region of said polysilicon in said trench;

    implanting a N+ (P+) type dopant, forming a N+ (P+) type region of said polysilicon in said trench;

    forming a polysilicon diode in said trench wherein a portion of said diode is lower than said top surface of said trench.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×