Trench polysilicon diode
First Claim
1. A method of manufacturing a vertical trench polysilicon diode comprising:
- forming a N−
(P−
) type epitaxial region on N+ (P+) type substrate;
forming a trench in said epitaxial region;
forming an insulating layer in said trench;
filling said trench with polysilicon forming a top surface of said trench;
implanting a P+ (N+) type dopant, forming a P+ (N+) type region of said polysilicon in said trench;
implanting a N+ (P+) type dopant, forming a N+ (P+) type region of said polysilicon in said trench;
forming a polysilicon diode in said trench wherein a portion of said diode is lower than said top surface of said trench.
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Accused Products
Abstract
Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N− (P−) type epitaxial region on a N+ (P+) type substrate and forming a trench in the N− (P−) type epitaxial region. The method further includes forming a insulating layer in the trench and filling the trench with polysilicon forming a top surface of the trench. The method further includes forming P+ (N+) type doped polysilicon region and N+ (P+) type doped polysilicon region in the trench and forming a diode in the trench wherein a portion of the diode is lower than the top surface of the trench.
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Citations
35 Claims
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1. A method of manufacturing a vertical trench polysilicon diode comprising:
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forming a N−
(P−
) type epitaxial region on N+ (P+) type substrate;
forming a trench in said epitaxial region;
forming an insulating layer in said trench;
filling said trench with polysilicon forming a top surface of said trench;
implanting a P+ (N+) type dopant, forming a P+ (N+) type region of said polysilicon in said trench;
implanting a N+ (P+) type dopant, forming a N+ (P+) type region of said polysilicon in said trench;
forming a polysilicon diode in said trench wherein a portion of said diode is lower than said top surface of said trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A trench polysilicon diode comprising electrostatic discharge protection comprising:
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a N+ (P+) type substrate;
a N−
(P−
) type epitaxial region over said substrate;
a trench formed in said N−
(P−
) type epitaxial region, said trench comprising a top surface;
an insulating layer lining said trench;
a polysilicon filling said trench forming a top surface of said trench;
a P+ (N+) type doping polysilicon in said trench and formed by a P+ (N+) type ESD implant;
a N+ (P+) type doping polysilicon in said trench and formed by a N+ (P+) type source implant;
a diode formed in said trench such that a portion of said diode is formed below said top surface of said trench. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of manufacturing a trench polysilicon diode comprising:
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forming a trench in a N−
(P−
) type epitaxial region on a N+ (P+) type substrate;
forming an insulating layer in said trench wherein said insulating layer lines said trench;
filling said trench with a polysilicon forming a top surface of said trench;
forming a diode in said body region wherein a portion of said diode is lower than said top surface of said trench. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A temperature sensor comprising:
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a first trench polysilicon diode electrically coupled to a first pin and a second pin wherein a portion of said first trench polysilicon diode is under the surface a N−
(P−
) type epitaxial region;
a second trench polysilicon diode coupled to said first pin and said second pin wherein said first trench polysilicon diode and said second trench polysilicon diode are coupled in anti-parallel and wherein a temperature can be determined by a voltage measured between said first pin and said second pin and wherein a portion of said second trench polysilicon diode is under said surface said N−
(P−
) type epitaxial region. - View Dependent Claims (33, 34, 35)
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Specification