Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate comprising a front surface and a back surface;
a light receiving element formed on the front surface of the semiconductor substrate;
a transparent substrate attached to the front surface of the semiconductor substrate so as to cover the light receiving element;
a wiring layer formed on the back surface of the semiconductor substrate; and
a reflection layer formed on the back surface of the semiconductor substrate and located between the light receiving element and the wiring layer, the reflecting layer being configured to reflect an infrared ray passing through the transparent substrate, the light receiving element and the semiconductor substrate back toward to the light receiving element.
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Accused Products
Abstract
The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate comprising a front surface and a back surface;
a light receiving element formed on the front surface of the semiconductor substrate;
a transparent substrate attached to the front surface of the semiconductor substrate so as to cover the light receiving element;
a wiring layer formed on the back surface of the semiconductor substrate; and
a reflection layer formed on the back surface of the semiconductor substrate and located between the light receiving element and the wiring layer, the reflecting layer being configured to reflect an infrared ray passing through the transparent substrate, the light receiving element and the semiconductor substrate back toward to the light receiving element. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a semiconductor substrate comprising a front surface and a back surface;
a light receiving element formed on the front surface of the semiconductor substrate;
a transparent substrate attached to the front surface of the semiconductor substrate so as to cover the light receiving element;
a wiring layer formed on the back surface of the semiconductor substrate; and
an anti-reflection layer formed on the back surface of the semiconductor substrate and located between the light receiving element and the wiring layer, the anti-reflection layer being configured to absorb an infrared ray. - View Dependent Claims (6, 7, 8)
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Specification