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Multigate device with recessed strain regions

  • US 20070145487A1
  • Filed: 12/27/2005
  • Published: 06/28/2007
  • Est. Priority Date: 12/27/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate comprising a semiconductor material, the semiconductor material having a first crystal lattice with a first lattice structure and a first lattice spacing;

    a body region of the substrate, the body region having a top surface and side walls, the side walls being separated by a width and extending for a length;

    a gate electrode on a portion of the top surface and side walls of the body region;

    a source recess and a drain recess in the body region on either side of the gate electrode; and

    a stress material in the source and drain recesses, the stress material comprising a second material with a second crystal lattice with a second lattice structure substantially the same as the first lattice structure and a second lattice spacing different than the first lattice spacing.

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