Light emitting halogen-silicate photophosphor compositions and systems

• US 20070145879A1
• Filed: 12/22/2005
• Published: 06/28/2007
• Est. Priority Date: 12/22/2005
• Status: Abandoned Application

• Current Assignee: ACOL Technologies S.A.
• Original Assignee: ACOL Technologies S.A.
• Inventors: Abramov, Vladimir, Soschin, Naum, Scherbakov, Nikolay, Shishov, Alexander
• Application Number:
  US11/316,177
• Publication Number:
  US 20070145879A1
• Time in Patent Office: Days
• US Class Current: 313/483
• CPC Class Codes: C09K 11/617 Silicates
• CPC Class Codes: C09K 11/77342 Silicates
• CPC Class Codes: Y02B 20/00 Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

New high-performance, highly tunable photophosphors are presented. These photophosphor'"'"'s pump spectra and emission spectra are both manipulated via variances in the formulation of compounds taught herein. In addition, new combinations of semiconductor devices in conjunction with these optically active materials are described. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with these photophosphors. High-energy short wavelength light mixes with the longer wavelengths light emitted by the halogen-silicate photophosphor to produce a broad spectrum perceived by human observers as “white light”.

Claims

1. ) Compositions of matter in accordance with:

((SrO)<sub>1−

x</sub>[Me]O_x)_a*(SiO₂)_b*Sr(F<sub>2−

y</sub>Cl_y);

(EuO)_z

where ‘

a’

is an integer between 1 and 6;

‘

b’

is an integer between 1 and 5;

x=0.1-0.001;

y=0.01-1.2;

z=0.001-0.1; and

[Me] is a metal from the group;

Ba⁺², Yb⁺², and Sm⁺².

2. ) Compositions of matter of claim 1, further defined as:

SrO*SiO₂*Sr(F,Cl)₂ or Sr₂SiO₃(F,Cl)₂

3. ) Compositions of matter of claim 1, further defined as:

2SrO*SiO₂*Sr(F,Cl)₂ or Sr₃SiO₄(F,Cl)₂

4. ) Compositions of matter of claim 1, further defined as:

3SrO*SiO₂*Sr(F,Cl)₂ or Sr₄SiO₅(F,Cl)₂

5. ) Compositions of matter of claim 1, further defined as:

SrO*2SiO₂*Sr(F,Cl)₂ or Sr₂Si₂O₅(F,Cl)₂

6. ) Compositions of matter of claim 1, further defined as:

2SrO*2SiO₂*Sr(F,Cl)₂ or Sr₃Si₂O₆(F,Cl)₂

7. ) Compositions of matter of claim 1, further defined as:

3SrO*2SiO₂*Sr(F,Cl)₂ or Sr₄Si₂O₇(F,Cl)₂

8. ) In combination, a light emitting semiconductor and halogen-silicate photophosphors, said light emitting semiconductor proximately positioned with respect to said halogen-silicate photophosphor whereby some of light emitted by the semiconductor interacts with the photophosphor and is shifted in wavelength via phosphor re-emission.

9. ) The combination of claim 8, said light emitting semiconductor is an InGaN diode structure.

10. ) The combination of claim 8, said photophosphor is prepared with an halogen activator in accordance with:

Sr(F<sub>2−

y</sub>Cl_y).

11. ) Compositions of claim 8, said material is formed as crystals having a crystalline structure characterized triagonal.

12. ) Compositions of claim 8, said matter is formed as crystals having a mean crystal size between 8 and 40 times its peak emission wavelength.

13. ) The combination of claim 8, where ‘

proximately positioned’

is further defined as a colloid formed as a phosphor-polymer suspension being coated over said semiconductor light emitter.

14. ) The combination of claim 12, said polymer is further defined as a polyethylsiloxane or polyepoxide having mass about between 2000 to 20000 carbon units.

15. ) The combination of claim 12, phosphor-polymer by mass is between 0.1 and 0.75.

16. ) The combination of claim 14, said polymer is formed as a layer having a thickness between about 20-100 microns.