Organic electroluminescence display device and fabricating method thereof

• US 20070145887A1
• Filed: 05/04/2006
• Published: 06/28/2007
• Est. Priority Date: 12/22/2005
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Chae, Gee, Kim, Jin
• Granted Patent: US 7,965,034 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/1275 Electrical connections of the two substrates
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers

Abstract

An organic electro-luminescence display device includes at least one light emission device, the organic light emission device having a first electrode; at least one thin film transistor for driving the light emission device, a pixel electrode being connected to the at least one thin film transistor; a conductive layer formed of a conductive polymer material to electrically connect the light emission device and the pixel electrode.

Claims

1. An organic electroluminescence display device, comprising:

a light emission array having a color filter array and an organic light emitting layer on a first substrate;

a thin film transistor array on a second substrate for controlling the light emission array; and

a contact electrode formed of a conductive polymer material to electrically connect the light emission array and the thin film transistor array.

2. The organic electroluminescence display device according to claim 1, wherein the conductive polymer material comprises at least any one of polyaniline, polypyrole and polythiopene.

3. The organic electroluminescence display device according to claim 1, wherein the light emission array further comprises:

a color filter array formed on the first substrate;

a first electrode formed on the color filter array;

an organic light emitting layer formed on the first electrode;

a second electrode formed on the organic light emitting layer; and

a barrier rib formed on the first electrode for dividing the organic light emitting layer and the second electrode to define a pixel area.

4. The organic electroluminescence display device according to claim 3, wherein the color filter array further comprises:

a black matrix formed at a location corresponding to the barrier rib on the first substrate;

a plurality of color filters formed with the black matrix therebetween;

an auxiliary color layer formed on the color filter; and

an overcoat layer formed on the first substrate where the auxiliary color layer is formed.

5. The organic electroluminescence display device according to claim 3, wherein the thin film transistor array further comprises:

a semiconductor layer formed on the second substrate, the semiconductor layer having a source area, a drain area and a channel area between the source area and the drain area;

a gate electrode overlapped with the channel area of the semiconductor layer with a gate insulating film therebetween;

a source electrode connected to the source area of the semiconductor layer through a source contact hole which penetrates the gate insulating film and an interlayer insulating film that is deposited on the gate insulating film;

a drain electrode connected to the drain area of the semiconductor layer through a drain contact hole which penetrates the gate insulating film and the interlayer insulating film; and

a pixel electrode connected to the drain electrode through a pixel contact hole which penetrates the interlayer insulating film and a passivation film that is deposited on the source electrode and the drain electrode.

6. The organic electroluminescence display device according to claim 5, wherein the contact electrode contacts the second electrode and the pixel electrode.

7. The organic electroluminescence display device according to claim 6, wherein the contact electrode has a lower surface energy than the second electrode of the light emission array.

8. The organic electroluminescence display device according to claim 1, further comprising:

a contact supporting part formed on the thin film transistor array.

9. The organic electroluminescence display device according to claim 8, wherein the contact electrode is formed to cover the contact supporting part.

10. The organic electroluminescence display device according to claim 1, wherein the first and second substrates are bonded together by a sealant.

11. A method of fabricating an organic electroluminescence display device, comprising:

providing first and second substrates;

forming a light emission array including a color filter array and an organic light emitting layer on the first substrate;

forming a thin film transistor array on the second substrate for controlling the light emission array; and

forming a contact electrode which includes a conductive polymer material for electrically connecting the light emission array and the thin film transistor array.

12. The method according to claim 11, wherein the step of forming the light emission array further comprises:

forming a color filter array on the first substrate;

forming a first electrode on the color filter array;

forming an organic light emitting layer on the first electrode;

forming a second electrode on the organic light emitting layer; and

forming a barrier rib on the first electrode for dividing the organic light emitting layer and the second electrode to define a pixel area.

13. The method according to claim 12, wherein the step of forming the color filter array further comprises:

forming a black matrix at a location corresponding to the barrier rib on the first substrate;

forming a plurality of color filters with the black matrix therebetween;

forming an auxiliary color layer on the color filters; and

forming an overcoat layer on the first substrate where the auxiliary color layer is formed.

14. The method according to claim 12, wherein the step of forming the thin film transistor array further comprises:

forming a semiconductor layer including a source area, a drain area and a channel area between the source area and the drain area on the second substrate;

forming a gate electrode overlapped with the channel area of the semiconductor layer with a gate insulating film therebetween;

forming a source electrode connected to the source area of the semiconductor layer through a source contact hole which penetrates the gate insulating film and an interlayer insulating film that is deposited on the gate insulating film;

forming a drain electrode connected to the drain area of the semiconductor layer through a drain contact hole which penetrates the gate insulating film and the interlayer insulating film; and

forming a pixel electrode connected to the drain electrode through a pixel contact hole which penetrates the interlayer insulating film and a passivation film that is deposited on the source electrode and the drain electrode.

15. The method according to claim 14, wherein the step of forming the contact electrode includes forming the contact electrode to be in contact with the second electrode and the pixel electrode.

16. The method according to claim 15, wherein the contact electrode has a lower surface energy than the second electrode of the light emission array.

17. The method according to claim 11, further comprising forming a contact supporting part including a metal on the thin film transistor array, wherein the step of forming the contact electrode further comprises forming the contact electrode on the contact supporting part.

18. The method according to claim 17, wherein the step of forming the contact electrode includes forming the contact electrode to cover the contact supporting part.

19. The method according to claim 18, wherein the step of forming the contact electrode includes:

spreading the conductive polymer material on the thin film transistor array where the contact supporting part is formed;

moving a mold having a groove to cover the contact supporting part within the groove;

solidifying the conductive polymer material between the groove and the contact supporting part; and

removing the mold.

20. The method according to claim 19, wherein the step of moving the mold includes moving the mold to be in contact with the thin film transistor array.

21. The method according to claim 19, wherein the step of solidifying the conductive polymer material includes performing at least one of a thermosetting process, a light curing process, a photo polymerization reaction process, and a heat treatment.

22. The method according to claim 19, further comprising surface-treating the mold to be repulsive to the conductive polymer material.

23. The method according to claim 18, wherein the step of forming the contact electrode further comprises:

distributing the conductive polymer material on the contact supporting part by a supply roller; and

applying heat to the conductive polymer material so that the conductive polymer material is formed to cover the contact supporting part by a thermal flow.

24. The method according to claim 18, wherein the step of forming the contact electrode further comprises:

printing the conductive polymer material at a top side of the contact supporting part;

applying heat to the conductive polymer material so that a portion of the conductive polymer material at the top side of the contact supporting part flows down to cover a sidewall of the contact supporting part.

25. The method according to claim 24, wherein the step of applying the heat includes applying heat to the conductive polymer material so that a portion of the conductive polymer material at the top side of the contact supporting part flows down to cover the entire sidewall of the contact supporting part and contact the thin film transistor array.

26. The method according to claim 11, further comprising bonding the first and second substrates together by a sealant.

27. An organic electroluminescence display device, comprising:

at least one light emission device, the light emission device having a first electrode;

at least one thin film transistor for driving the light emission device, the at least one thin film transistor being connected to a pixel electrode; and

a conductive layer formed of a conductive polymer material to electrically connect the light emission device and the pixel electrode.

28. The organic electroluminescence display device according to claim 27, wherein the conductive polymer material comprises at least any one of polyaniline, polypyrole and polythiopene.

29. The organic electroluminescence display device according to claim 27, wherein the conductive layer has a lower surface energy than the first electrode of the light emission device.

30. A method of fabricating an organic electroluminescence display device, comprising

forming at least one light emission device having a first electrode;

forming at least one thin film transistor for driving the light emission device;

forming a pixel electrode connected to the at least one thin film transistor; and

forming a conductive layer formed of a conductive polymer material to electrically connect the light emission device and the pixel electrode.

31. The method according to claim 30, wherein the conductive layer has a lower surface energy than the first electrode of the light emission device.

32. The method according to claim 30, further comprising forming a supporting element including a metal on the pixel electrode, wherein the step of forming the conductive layer further comprises forming the conductive layer on the supporting element.

33. The method according to claim 32, wherein the step of forming the conductive layer includes:

spreading the conductive polymer material on the supporting element;

moving a mold having a groove to cover the supporting element within the groove;

solidifying the conductive polymer material between the groove and the supporting element; and

removing the mold.

34. The method according to claim 33, wherein the step of moving the mold includes moving the mold to be in contact with the pixel electrode.

35. The method according to claim 33, wherein the step of solidifying the conductive polymer material includes performing at least one of a thermosetting process, a light curing process, a photo polymerization reaction process, and a heat treatment.

36. The method according to claim 33, further comprising surface-treating the mold to be repulsive to the conductive polymer material.

37. The method according to claim 32, wherein the step of forming the conductive layer further comprises:

distributing the conductive polymer material on the supporting element by a supply roller; and

applying heat to the conductive polymer material so that the conductive polymer material is formed to cover the supporting element by a thermal flow.

38. The method according to claim 32, wherein the step of forming the conductive layer further comprises:

printing the conductive polymer material at a top side of the supporting element; and

applying heat to the conductive polymer material so that a portion of the conductive polymer material at the top side of the supporting element flows down to cover a sidewall of the supporting element.