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Semiconductor device and method for manufacturing the same

  • US 20070146566A1
  • Filed: 12/14/2006
  • Published: 06/28/2007
  • Est. Priority Date: 12/26/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a thin film transistor over the substrate, comprising;

    a channel formation region;

    a source region;

    a drain region;

    a gate insulating film; and

    a gate electrode;

    a gate wiring connected to the gate electrode;

    a source wiring connected to the source region;

    a drain electrode connected to the drain region;

    an auxiliary capacitor provided over the substrate;

    a pixel electrode connected to the drain electrode; and

    an insulating film which covers the thin film transistor and the source wiring,wherein the insulating film has an opening, andwherein the pixel electrode and the auxiliary capacitor are formed in an area where the opening is formed.

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