Liquid crystal display device and manufacturing method thereof

• US 20070146568A1
• Filed: 02/22/2007
• Published: 06/28/2007
• Est. Priority Date: 03/17/2000
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Yamazaki, Shunpei
• Application Number:
  US11/708,905
• Publication Number:
  US 20070146568A1
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/133707 Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/1393 the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells G02F1/1396, G02F1/141 take precedence
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

An electro-optical device typified by an active matrix type liquid crystal display device, is manufactured by cutting a rubbing process, and in addition, a reduction in the manufacturing cost and an improvement in the yield are realized by reducing the number of process steps to manufacture a TFT. By forming a pixel TFT portion having a reverse stagger type n-channel TFT, and a storage capacitor, by performing three photolithography steps using three photomasks, and in addition, by having a uniform cell gap by forming wall-like spacers by performing one photolithography step, without performing a rubbing process, a multi-domain perpendicular orientation type liquid crystal display device having a wide viewing angle display, and in which a switching direction of the liquid crystal molecules is controlled, can be realized.

Claims

1. A method of manufacturing an active matrix liquid crystal device comprising:

forming a spacer over a first substrate by photolithography;

forming an orientation film for vertical alignment over the first substrate after forming the spacer so that the spacer is located between the orientation film and the first substrate;

dripping a liquid crystal onto one of the first substrate and a second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

2. The method according to claim 1 wherein the spacer has a wall-like shape.

3. The method according to claim 1, wherein the spacer comprises an organic resin.

4. A method of manufacturing an active matrix liquid crystal device comprising:

forming a spacer over a first substrate by photolithography;

forming an orientation film for vertical alignment over the first substrate after forming the spacer so that the spacer is located between the orientation film and the first substrate;

forming a thin film transistor over a second substrate;

forming a pixel electrode over the second substrate wherein the thin film transistor is electrically connected to the pixel electrode;

dripping a liquid crystal onto one of the first substrate and the second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

5. The method according to claim 4 wherein the spacer has a wall-like shape.

6. The method according to claim 4, wherein the spacer comprises an organic resin.

7. The method according to claim 4 wherein a channel of the thin film transistor comprises amorphous silicon.

8. A method of manufacturing an active matrix liquid crystal device comprising:

forming a spacer over a first substrate by photolithography;

forming a first orientation film for vertical alignment over the first substrate after forming the spacer so that the spacer is located between the first orientation film and the first substrate;

forming a convex portion over a second substrate;

forming a second orientation film for vertical alignment over the second substrate after forming the convex portion so that the convex portion is located between the second orientation film and the second substrate;

dripping a liquid crystal onto one of the first substrate and the second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

9. The method according to claim 8 wherein the spacer has a wall-like shape.

10. The method according to claim 8, wherein the spacer comprises an organic resin.

11. The method according to claim 8 wherein the convex portion comprises an organic resin.

12. The method according to claim 8 wherein the convex portion includes a portion which has a stripe shape.

13. A method of manufacturing an active matrix liquid crystal device comprising:

forming a spacer over a first substrate by photolithography;

forming a convex portion over the first substrate;

forming an orientation film for vertical alignment over the first substrate after forming the spacer and the convex portion so that the spacer and the convex portion are located between the orientation film and the first substrate;

dripping a liquid crystal onto one of the first substrate and a second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

14. The method according to claim 13 wherein the spacer has a wall-like shape.

15. The method according to claim 13, wherein the spacer comprises an organic resin.

16. The method according to claim 13 wherein the convex portion comprises an organic resin.

17. The method according to claim 13 wherein the convex portion includes a portion which has a stripe shape.

18. A method of manufacturing an active matrix liquid crystal device comprising:

forming a convex portion over a first substrate;

forming an orientation film for vertical alignment over the first substrate after forming the convex portion so that the convex portion is located between the orientation film and the first substrate;

dripping a liquid crystal onto one of the first substrate and a second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

19. The method according to claim 18, wherein the spacer comprises an organic resin.

20. The method according to claim 18 wherein the convex portion comprises an organic resin.

21. The method according to claim 18 wherein the convex portion includes a portion which has a stripe shape.

22. A method of manufacturing an active matrix liquid crystal device comprising:

forming a spacer over a first substrate by photolithography;

forming a first orientation film for vertical alignment over the first substrate after forming the spacer so that the spacer is located between the first orientation film and the first substrate;

forming a thin film transistor over a second substrate;

forming a pixel electrode over the second substrate wherein the thin film transistor is electrically connected to the pixel electrode;

forming a convex portion over the pixel electrode;

forming a second orientation film for vertical alignment over the second substrate after forming the convex portion so that the convex portion is located between the second orientation film and the second substrate;

dripping a liquid crystal onto one of the first substrate and the second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

23. The method according to claim 22 wherein the spacer has a wall-like shape.

24. The method according to claim 22, wherein the spacer comprises an organic resin.

25. The method according to claim 22 wherein the convex portion comprises an organic resin.

26. The method according to claim 22 wherein the convex portion includes a portion which has a stripe shape.

27. The method according to claim 22 wherein a channel of the thin film transistor comprises amorphous silicon.

28. A method of manufacturing an active matrix liquid crystal device comprising:

forming a spacer over a first substrate by photolithography;

forming a convex portion over the first substrate;

forming an orientation film for vertical alignment over the first substrate after forming the spacer and the convex portion so that the spacer and the convex portion are located between the orientation film and the first substrate;

forming a thin film transistor over a second substrate;

forming a pixel electrode over the second substrate wherein the thin film transistor is electrically connected to the pixel electrode;

dripping a liquid crystal onto one of the first substrate and the second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

29. The method according to claim 28 wherein the spacer has a wall-like shape.

30. The method according to claim 28, wherein the spacer comprises an organic resin.

31. The method according to claim 28 wherein the convex portion comprises an organic resin.

32. The method according to claim 28 wherein the convex portion includes a portion which has a stripe shape.

33. The method according to claim 28 wherein a channel of the thin film transistor comprises amorphous silicon.

34. A method of manufacturing an active matrix liquid crystal device comprising:

forming a convex portion over a first substrate;

forming an orientation film for vertical alignment over the first substrate after forming the convex portion so that the convex portion is located between the orientation film and the first substrate;

forming a thin film transistor over a second substrate;

forming a pixel electrode over the second substrate wherein the thin film transistor is electrically connected to the pixel electrode;

dripping a liquid crystal onto one of the first substrate and the second substrate; and

joining the first substrate and the second substrate by a sealing member with the liquid crystal interposed therebetween.

35. The method according to claim 34 wherein the convex portion comprises an organic resin.

36. The method according to claim 34 wherein the convex portion includes a portion which has a stripe shape.

37. The method according to claim 34 wherein a channel of the thin film transistor comprises amorphous silicon.