Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a memory element including a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer,wherein at least one of the first conductive layer and the second conductive layer has a top view shape which is bent at least once.
1 Assignment
0 Petitions
Accused Products
Abstract
An object of the present invention to provide a semiconductor device having a highly functional memory element with improved reliability, and to provide a technique for manufacturing such a highly reliable semiconductor device with a high yield at low cost without complicating an apparatus or a process. As a top view shape of a memory element, a rectangular shape having a projection and a depression on the periphery, a zigzagged shape having one or plural bends, a comb shape, a ring shape having an opening (space) inside, or the like is used. Alternatively, a rectangle with a ratio of a long side to a short side being high, an ellipse with a ratio of a long axis to a short axis being high, or the like can also be used.
-
Citations
43 Claims
-
1. A semiconductor device comprising:
-
a memory element including a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer, wherein at least one of the first conductive layer and the second conductive layer has a top view shape which is bent at least once. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device comprising:
-
a memory element including a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer, wherein at least one of the first conductive layer and the second conductive layer has a top view ring-shape. - View Dependent Claims (7, 8, 9)
-
-
10. A semiconductor device comprising:
-
a memory element including a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer, wherein at least one of the first conductive layer and the second conductive layer has a top view shape with a slit. - View Dependent Claims (11, 12, 13)
-
-
14. A semiconductor device comprising:
-
a memory element including a first conductive layer, an insulating layer having an opening formed over the first conductive layer, an organic compound layer formed in the opening over the first conductive layer, and a second conductive layer formed over the organic compound layer, wherein the opening has a top view shape which is bent at least once. - View Dependent Claims (15, 16, 17)
-
-
18. A semiconductor device comprising:
-
a memory element including a first conductive layer, an insulating layer having an opening formed over the first conductive layer, an organic compound layer formed in the opening over the first conductive layer, and a second conductive layer formed over the organic compound layer, wherein the opening has a top view ring-shape. - View Dependent Claims (19, 20)
-
-
21. A semiconductor device comprising:
-
a memory element including a first conductive layer, an insulating layer having an opening formed over the first conductive layer, an organic compound layer formed in the opening over the first conductive layer, and a second conductive layer formed over the organic compound layer, wherein the opening has a top view shape with a slit. - View Dependent Claims (22, 23)
-
-
24. A method for manufacturing a semiconductor device including a memory element, the memory element comprising:
-
forming a first conductive layer having a top view shape which is bent at least once, forming an organic compound layer over the first conductive layer having the top view shape which is bent at least once, and forming a second conductive layer over the organic compound layer. - View Dependent Claims (25, 26, 27)
-
-
28. A method for manufacturing a semiconductor device including a memory element, the memory element comprising:
-
forming a first conductive layer having a top view ring-shape, forming an organic compound layer over the first conductive layer having the top view ring-shape, and forming a second conductive layer over the organic compound layer. - View Dependent Claims (29, 30)
-
-
31. A method for manufacturing a semiconductor device including a memory element, the memory element comprising:
-
forming a first conductive layer having a top view shape with a slit, forming an organic compound layer over the first conductive layer having the top view shape with the slit, and forming a second conductive layer over the organic compound layer. - View Dependent Claims (32, 33)
-
-
34. A method for manufacturing a semiconductor device including a memory element, the memory element comprising:
-
forming a first conductive layer, forming an insulating layer having an opening with a top view shape which is bent at least once over the first conductive layer, forming an organic compound layer in the opening with the top view shape which is bent at least once over the first conductive layer, and forming a second conductive layer over the organic compound layer. - View Dependent Claims (35, 36, 37)
-
-
38. A method for manufacturing a semiconductor device including a memory element, the memory element, comprising:
-
forming a first conductive layer, forming an insulating layer having an opening with a top view ring-shape over the first conductive layer, forming an organic compound layer in the opening over the first conductive layer, and forming a second conductive layer over the organic compound layer. - View Dependent Claims (39, 40)
-
-
41. A method for manufacturing a semiconductor device including a memory element, the memory element, comprising:
-
forming a first conductive layer, forming an insulating layer having an opening with a top view shape with a slit over the first conductive layer, forming an organic compound layer in the opening over the first conductive layer, and forming a second conductive layer over the organic compound layer. - View Dependent Claims (42, 43)
-
Specification