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Semiconductor device and manufacturing method thereof

  • US 20070147104A1
  • Filed: 12/07/2006
  • Published: 06/28/2007
  • Est. Priority Date: 12/27/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a memory element including a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer,wherein at least one of the first conductive layer and the second conductive layer has a top view shape which is bent at least once.

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