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SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, INTEGRATED SEMICONDUCTOR LIGHT EMITTING APPARATUS, ITS MANUFACTURING METHOD, IMAGE DISPLAY APPARATUS, ITS MANUFACTURING METHOD, ILLUMINATING APPARATUS, AND ITS MANUFACTURING METHOD

  • US 20070147453A1
  • Filed: 03/06/2007
  • Published: 06/28/2007
  • Est. Priority Date: 09/06/2002
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a semiconductor layer of a first conductivity type in which one principal plane has any one of a prismatic and conical crystal portion having an upper surface that is substantially parallel with the principal plane and a side surface that is any one of substantially perpendicular and inclined to the principal plane;

    at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;

    a first electrode electrically connected to the semiconductor layer of the first conductivity type; and

    a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.

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