SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, INTEGRATED SEMICONDUCTOR LIGHT EMITTING APPARATUS, ITS MANUFACTURING METHOD, IMAGE DISPLAY APPARATUS, ITS MANUFACTURING METHOD, ILLUMINATING APPARATUS, AND ITS MANUFACTURING METHOD
First Claim
1. A semiconductor light emitting device comprising:
- a semiconductor layer of a first conductivity type in which one principal plane has any one of a prismatic and conical crystal portion having an upper surface that is substantially parallel with the principal plane and a side surface that is any one of substantially perpendicular and inclined to the principal plane;
at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;
a first electrode electrically connected to the semiconductor layer of the first conductivity type; and
a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.
0 Assignments
0 Petitions
Accused Products
Abstract
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
-
Citations
13 Claims
-
1. A semiconductor light emitting device comprising:
-
a semiconductor layer of a first conductivity type in which one principal plane has any one of a prismatic and conical crystal portion having an upper surface that is substantially parallel with the principal plane and a side surface that is any one of substantially perpendicular and inclined to the principal plane;
at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;
a first electrode electrically connected to the semiconductor layer of the first conductivity type; and
a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. An integrated semiconductor light emitting apparatus obtained by integrating a plurality of semiconductor light emitting devices each comprising:
-
a semiconductor layer of a first conductivity type in which one principal plane has any one of a prismatic or conical crystal portion having an upper surface that is substantially parallel with the principal plane and a side surface that is any one of substantially perpendicular and inclined to the principal plane;
at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;
a first electrode electrically connected to the semiconductor layer of the first conductivity type; and
a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.
-
-
12. An image display apparatus obtained by integrating a plurality of semiconductor light emitting devices each comprising:
-
a semiconductor layer of a first conductivity type in which one principal plane has any one of a prismatic or conical crystal portion having an upper surface that is substantially parallel with the principal plane and a side surface that is any one of substantially perpendicular and inclined to the principal plane;
at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;
a first electrode electrically connected to the semiconductor layer of the first conductivity type; and
a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.
-
-
13. An illuminating apparatus obtained by integrating a plurality of semiconductor light emitting devices each comprising:
-
a semiconductor layer of a first conductivity type in which one principal plane has any one of a prismatic and conical crystal portion having an upper surface that is substantially parallel with the principal plane and a side surface that is any one of substantially perpendicular and inclined to the principal plane;
at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;
a first electrode electrically connected to the semiconductor layer of the first conductivity type; and
a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.
-
Specification