PHOTOVOLTAIC CONTACT AND WIRING FORMATION

• US 20070148336A1
• Filed: 11/06/2006
• Published: 06/28/2007
• Est. Priority Date: 11/07/2005
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Shang, Quanyuan, Bachrach, Robert
• Application Number:
  US11/556,776
• Publication Number:
  US 20070148336A1
• Time in Patent Office: Days
• US Class Current: 427/97.100
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H05K 3/048 using a lift-off resist pattern or a release layer pattern
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method and apparatus for fabricating a solar cell and forming metal contact is disclosed. Solar cell contact and wiring is formed by depositing a thin film stack of a first metal material and a second metal material as an initiation layer or seed layer for depositing a bulk metal layer in conjunction with additional sheet processing, photolithography, etching, cleaning, and annealing processes. In one embodiment, the thin film stack for forming metal silicide with reduced contact resistance over the sheet is deposited by sputtering or physical vapor deposition. In another embodiment, the bulk metal layer for forming metal lines and wiring is deposited by sputtering or physical vapor deposition. In an alternative embodiment, electroplating or electroless deposition is used to deposit the bulk metal layer.

Claims

1. A method for forming metal contact and wiring on a sheet, comprising:

depositing an antireflective coating layer on the surface of the sheet;

forming a pattern of a photoresist material for contact metallization on the surface of the sheet;

curing the photoresist material;

etching the antireflective coating layer through the pattern of the photoresist material;

cleaning the surface of the sheet;

depositing a film stack having the first metal material and a second metal material over the surface of the sheet inside a physical vapor deposition chamber;

stripping the photoresist material off the surface of the sheet;

annealing the sheet for forming good contact between the film stack and the sheet; and

depositing a bulk metal material over the surface of the sheet.

2. The method of claim 1, wherein the antireflective coating layer comprises silicon nitride formed inside a chamber selected from the group consisting of a plasma enhanced chemical vapor deposition chamber (PECVD) and a physical vapor deposition chamber (PVD).

3. The method of claim 1, wherein the pattern of the photoresist material is formed by inkjet printing.

4. The method of claim 1, wherein the first metal material comprises a material selected from the group consisting of nickel, titanium, molybdenum, their alloys, and combinations thereof.

5. The method of claim 1, wherein the second metal material comprises a material selected from the group consisting of copper, silver, aluminum, their alloys, and combinations thereof.

6. The method of claim 1, wherein the bulk metal material is deposited over the surface of the sheet inside a process chamber selected from the group consisting of a physical vapor deposition chamber, an electroplating cell, an electroless deposition chamber.

7. The method of claim 1, wherein stripping the photoresist material is performed before the bulk metal material is deposited over the surface of the sheet.

8. The method of claim 1, wherein stripping the photoresist material is performed after the bulk metal material is deposited over the surface of the sheet.

9. The method of claim 1, wherein annealing is performed inside a chamber selected from the group consisting of an annealing furnace and a rapid thermal processing chamber.

10. The method of claim 1, further comprising depositing a passivation layer over the surface of the sheet.

11. The method of claim 1, further comprising forming features before the antireflective coating layer is deposited over the surface of the sheet.

12. The method of claim 11, further comprising filling features with metal materials.

13. The method of claim 1, further comprising forming a pattern of a second photoresist material after depositing the bulk metal material on the surface of the sheet.

14. The method of claim 1, wherein the first metal material is deposited to a thickness of between about 40 nm and about 80 nm.

15. The method of claim 1, wherein the first metal material is deposited to a thickness of between about 50 nm and about 300 nm.

16. The method of claim 1, wherein the first metal material is deposited to a thickness of about 500 nm or larger.

17. A method for forming metal contact and wiring on a sheet, comprising:

depositing an antireflective coating layer on the surface of the sheet;

forming a pattern of a photoresist material for contact metallization on the surface of the sheet;

curing the photoresist material;

etching the antireflective coating layer through the pattern of the photoresist material;

cleaning the surface of the sheet;

depositing a film stack having the first metal material and a second metal material over the surface of the sheet inside a physical vapor deposition chamber;

depositing a bulk metal material over the surface of the sheet inside an electroplating system.

18. The method of claim 17, further comprising stripping the photoresist material off the surface of the sheet after the bulk metal material is deposited.

19. The method of claim 17, further comprising stripping the photoresist material off the surface of the sheet before the bulk metal material is deposited.

20. The method of claim 17, further comprising annealing the sheet for forming good contact between the film stack and the sheet.

21. The method of claim 17, further comprising forming a pattern of a second photoresist material.

22. The method of claim 21, further comprising etching the bulk metal material.

23. A method for forming metal contact and wiring on a sheet, comprising:

depositing an antireflective coating layer on the surface of the sheet;

forming a pattern of a photoresist material for contact metallization on the surface of the sheet;

curing the photoresist material;

etching the antireflective coating layer through the pattern of the photoresist material;

cleaning the surface of the sheet;

depositing a film stack having the first metal material and a second metal material over the surface of the sheet inside a physical vapor deposition chamber;

stripping the photoresist material off the surface of the sheet;

annealing the sheet for forming good contact between the film stack and the sheet; and

depositing a bulk metal material over the surface of the sheet inside an electroless deposition system.

24. The method of claim 23, further comprising stripping the photoresist material off the surface of the sheet.