Enhanced thin film deposition
First Claim
1. An atomic layer deposition (ALD) process for forming a metal carbide thin film comprising a plurality of deposition cycles, at least one cycle comprising contacting a substrate in a reaction space with alternating and sequential pulses of a first source chemical that comprises at least one halide ligand and a metal that is to be included in the thin film, a second source chemical comprising metal and carbon, wherein carbon from the second source chemical is incorporated into the thin film, and a third source chemical, wherein the third source chemical is a deposition-enhancing agent.
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Abstract
Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.
519 Citations
43 Claims
- 1. An atomic layer deposition (ALD) process for forming a metal carbide thin film comprising a plurality of deposition cycles, at least one cycle comprising contacting a substrate in a reaction space with alternating and sequential pulses of a first source chemical that comprises at least one halide ligand and a metal that is to be included in the thin film, a second source chemical comprising metal and carbon, wherein carbon from the second source chemical is incorporated into the thin film, and a third source chemical, wherein the third source chemical is a deposition-enhancing agent.
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20. A method for depositing a metal carbide thin film on a substrate in a reaction chamber, the method comprising providing alternating, self-saturating pulses of reactants in a plurality of deposition cycles, each cycle comprising contacting a substrate in a reaction space with separate pulses of a first metal source chemical, a second source chemical comprising carbon and a third source chemical, wherein the third source chemical is a hydrocarbon.
- 24. The method of claim 24, wherein the third source chemical is selected from the group consisting of alkanes, alkenes, and alkynes.
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29. A method of depositing a metal oxide thin film on a substrate in a reaction space by an atomic layer deposition process, the atomic layer deposition process comprising a plurality of deposition cycles, each cycle comprising supplying separate pulses of:
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a metal reactant;
a second reactant comprising an oxygen source; and
a third reactant that is a hydrocarbon.
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- 33. An atomic layer deposition (ALD) process for forming an elemental metal thin film on a substrate, the process comprising contacting the substrate with alternating and sequential pulses of a deposition-enhancing agent, a metal source chemical, and a reducing agent selected from the group consisting of boranes and silanes.
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34. The process of claim 44, wherein the metal source chemical is a halide.
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35. The process of claim 44, wherein the deposition-enhancing agent reacts with halide contaminants in the growing thin film.
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36. An atomic layer deposition (ALD) process for forming a silicon-containing thin film on a substrate, the process comprising contacting the substrate with alternating and sequential pulses of a metal source chemical, a silicon source chemical and a deposition-enhancing agent.
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37. The process of claim 55, wherein the silicon-containing thin film comprises a metal silicide.
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38. The process of claim 55, wherein the silicon source chemical is a silane (SixHy).
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39. The process of claim 55, wherein the deposition-enhancing agent is selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes germanium compounds, boron compounds and boranes.
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40. An atomic layer deposition process for depositing a metal or silicon-containing thin film on a substrate using at least three source chemicals, wherein at least one of the source chemicals is a hydrocarbon.
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41. The process of claim 67, wherein the hydrocarbon is selected from the group consisting of alkanes, alkenes and alkynes.
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42. The process of claim 68, wherein the hydrocarbon is acetylene.
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43. The process of claim 68, wherein the hydrocarbon removes contaminants from thin film.
Specification