Method of fabricating a multi-cornered film
First Claim
1. A method of patterning a film comprising:
- forming a photoresist mask having a first width on a hard mask film formed on a film;
patterning said hard mask film in alignment with said photoresist mask to produce a hard mask;
reducing the width of said photoresist mask to form a reduced width photoresist mask having a second width;
etching a first portion of said film in alignment with the hard mask;
etching said hard mask in alignment with said reduced width photoresist mask to form a reduced width hard mask; and
etching a second portion of said film in alignment with said reduced width hard mask.
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Accused Products
Abstract
Embodiments of the present invention describe a method of forming a multi-cornered film. According to the embodiments of the present invention, a photoresist mask is formed on a hard mask film formed on a film. The hard mask film is then patterned in alignment with the photoresist mask to produce a hard mask. The width of the photoresist mask is then reduced to form a reduced width photoresist mask. A first portion of the film is then etched in alignment with the hard mask. The hard mask is then etched in alignment with the reduced width photoresist mask to form a reduced width hard mask. A second portion of the film is then etched in alignment with the reduced width hard mask.
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Citations
20 Claims
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1. A method of patterning a film comprising:
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forming a photoresist mask having a first width on a hard mask film formed on a film;
patterning said hard mask film in alignment with said photoresist mask to produce a hard mask;
reducing the width of said photoresist mask to form a reduced width photoresist mask having a second width;
etching a first portion of said film in alignment with the hard mask;
etching said hard mask in alignment with said reduced width photoresist mask to form a reduced width hard mask; and
etching a second portion of said film in alignment with said reduced width hard mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a multi-cornered nonplanar device comprising:
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forming a photoresist mask having a first width on a hard mask film formed on a semiconductor film having a first thickness formed on an insulating substrate;
etching said hard mask film in alignment with said photoresist mask to form a hard mask having a first width, said hard mask covering a central portion of said semiconductor film and exposing a first and second portion of said semiconductor film on opposite sides of said hard mask;
reducing the width of said photoresist mask to produce a reduced width photoresist mask having a second width;
anisotropically etching said semiconductor film in alignment with said hard mask having said first width so that said first and second portion of said semiconductor film has a second thickness less than said first thickness;
etching said hard mask in alignment with said reduced width photoresist mask to form a reduced width hard mask having said second width, said reduced width hard mask exposing a third and fourth portion of said semiconductor film on opposite sides of said reduced width hard mask, wherein said third and fourth portions of said semiconductor film are part of said central portion;
anisotropically etching said third and fourth portions of said semiconductor film in alignment with said reduced width hard mask, wherein said second etch of said semiconductor film also etches said first and second portions of said semiconductor film to thereby form a semiconductor body having sidewalls and a top surface wherein the sidewalls have a stair step configuration;
forming a gate dielectric layer on the side and top surface of said semiconductor body; and
forming a gate electrode over said gate dielectric layer formed on said sidewalls and top surface of said semiconductor body. - View Dependent Claims (11, 12, 13, 14)
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15. A method of forming a nonplanar transistor having a multi-cornered body comprising:
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forming a photoresist mask on a hard mask film formed on a semiconductor film;
patterning said hard mask film in alignment with said photoresist mask to produce a hard mask;
reducing the width of said photoresist mask to form a reduced width photoresist mask;
etching a first portion of said semiconductor film in alignment with said hard mask;
etching said hard mask in alignment with said reduced width photoresist mask to form a reduced width hard mask;
etching a second portion said semiconductor film in alignment with said reduced width hard mask;
wherein said etching of said first portion and said etching of said second portion to produce a semiconductor body having a top portion and a bottom portion;
removing said hard mask;
forming a gate dielectric layer over said top portion and said bottom portion;
forming a gate electrode on said gate dielectric layer formed on said top portion and said bottom portion of said semiconductor body; and
forming a pair of source/drain regions in said semiconductor body on opposite sides of said gate electrode. - View Dependent Claims (16, 17)
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18. A method of forming a multi-cornered semiconductor body comprising:
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etching a semiconductor film a first time to a first depth in alignment with a hard mask having a first width so as to define a lower body portion having said first width and a first height;
reducing the width of said hard mask to form a reduced width hard mask having a semiconductor;
etching said semiconductor film a second time in alignment with said reduced width hard mask so as to define an upper body portion having said second width and a second height. - View Dependent Claims (19, 20)
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Specification