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Method for manufacturing semiconductor device

  • US 20070148844A1
  • Filed: 12/15/2006
  • Published: 06/28/2007
  • Est. Priority Date: 12/28/2005
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:

  • forming a high-voltage well region in a semiconductor substrate;

    forming an isolation layer on the semiconductor substrate;

    implanting dopants into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region;

    forming a gate electrode on the semiconductor substrate; and

    implanting dopants into the low-voltage well region using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region.

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