Method for manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a high-voltage well region in a semiconductor substrate;
forming an isolation layer on the semiconductor substrate;
implanting dopants into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region;
forming a gate electrode on the semiconductor substrate; and
implanting dopants into the low-voltage well region using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region.
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Accused Products
Abstract
Disclosed is a method of manufacturing a semiconductor device, which includes the steps of: forming a high-voltage well region (e.g., by implanting impurity ions into a semiconductor substrate and then annealing); forming an isolation layer on the semiconductor substrate; implanting impurity ions into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region; forming a gate electrode on the semiconductor substrate; and implanting impurity ions using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region.
13 Citations
10 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a high-voltage well region in a semiconductor substrate; forming an isolation layer on the semiconductor substrate; implanting dopants into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region; forming a gate electrode on the semiconductor substrate; and implanting dopants into the low-voltage well region using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification