Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby
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Abstract
A method of forming a high dielectric oxide film conventionally formed using a post formation oxygen anneal to reduce the leakage current of such film includes forming a high dielectric oxide film on a surface. The high dielectric oxide film has a dielectric constant greater than about 4 and includes a plurality of oxygen vacancies present during the formation of the film. The high dielectric oxide film is exposed during the formation thereof to an amount of atomic oxygen sufficient for reducing the number of oxygen vacancies and eliminating the post formation oxygen anneal of the high dielectric oxide film. Further, the amount of atomic oxygen used in the formation method may be controlled as a function of the amount of oxygen incorporated into the high dielectric oxide film during the formation thereof or be controlled as a function of the concentration of atomic oxygen in a process chamber in which the high dielectric oxide film is being formed. An apparatus for forming the high dielectric oxide film is also described.
374 Citations
69 Claims
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1-60. -60. (canceled)
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61. A method of forming a dielectric film in the fabrication of semiconductor devices, the method comprising:
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providing atomic oxygen in a process chamber for use in deposition of a high dielectric oxide film on a surface, the high dielectric oxide film having a dielectric constant greater than about 4;
providing a vaporized precursor in the process chamber with the atomic oxygen for use during the deposition of the high dielectric oxide film;
depositing the high dielectric oxide film using the atomic oxygen and the vaporized precursor provided in the process chamber;
detecting an amount of oxygen incorporated into the high dielectric oxide film during the deposition thereof using spectroscopy; and
controlling the amount of atomic oxygen in the process chamber as a function of the detected amount of atomic oxygen incorporated into the high dielectric oxide film. - View Dependent Claims (62, 63, 64, 65, 66, 67, 68, 69)
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Specification