Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- first and second drift regions in a semiconductor substrate;
a trench region between the first and second drift regions;
an oxide layer spacer on sidewalls of the trench region;
an insulating layer below the trench region;
a gate in the trench region; and
a source in one of the first and second drift regions and a drain in the other of the first and second drift regions.
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Abstract
Disclosed is a semiconductor device. The semiconductor device includes; a pair of drift regions formed in a semiconductor substrate; a trench region formed between the pair of drift regions; an oxide layer spacer on both sidewalls of the trench region; a gate formed in the trench region; and a source and a drain formed in the pair of the drift regions, respectively.
13 Citations
18 Claims
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1. A semiconductor device comprising:
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first and second drift regions in a semiconductor substrate;
a trench region between the first and second drift regions;
an oxide layer spacer on sidewalls of the trench region;
an insulating layer below the trench region;
a gate in the trench region; and
a source in one of the first and second drift regions and a drain in the other of the first and second drift regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. The semiconductor device according to claim 8, wherein a part of the gate is on the upper surface of the oxide layer.
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9. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming first and second drift regions in a semiconductor substrate;
forming an oxide layer on the substrate such that the oxide layer partially overlaps the first and second drift regions;
forming a trench between the first and second drift regions;
forming an oxide spacer on sidewalls of the trench;
forming an insulating layer at a bottom of the trench;
forming a gate in the trench and on the oxide layer; and
forming a source in one of the first and second drift regions and a drain in the other of the first and second drift regions. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming first and second drift regions in a semiconductor substrate;
forming an oxide layer on the substrate such that the oxide layer overlaps with each of the first and second drift regions;
forming a nitride layer on the substrate;
forming a trench between the first and second drift regions;
forming an oxide spacer on sidewalls of the trench;
forming an insulating layer at a bottom of the trench;
removing the nitride layer;
forming a gate in the trench region and at least partially on the oxide layer; and
forming a source in one of the first and second drift regions and a drain in the other of the first and second drift regions. - View Dependent Claims (17, 18)
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Specification