Semiconductor component and method

• US 20070152268A1
• Filed: 11/28/2006
• Published: 07/05/2007
• Est. Priority Date: 11/28/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hille, Frank, Schulze, Hans-Joachim, Mauder, Anton, Pfaffenlehner, Manfred, Laska, Thomas, Umbach, Frank
• Granted Patent: US 7,709,887 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 21/263 with high-energy radiation H01L21/261 takes precedence
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.

Claims

1. A semiconductor component comprising:

a drift region of a first conductivity type;

a body region of a second conductivity type,

a trench extending into the body region; and

a semiconductor region of the first conductivity type which is in contact with the drift region and the body region and is arranged at a distance from the trench.

2. The semiconductor component of claim 1, comprising:

A dielectric layer covering a bottom of the trench.

3. The semiconductor component as claimed in claim 1, wherein the body region has a contact layer more heavily doped with dopants of the second conductivity type than the second semiconductor region.

4. The semiconductor component as claimed in claim 2 wherein the distance between the trench and the fourth semiconductor region is within the range of 10-200 nm.

5. The semiconductor component as claimed in claim 1, comprising wherein a penetration depth of the semiconductor region does not exceed twice a penetration depth of the trench.

6. The semiconductor component as claimed in claim 1, comprising wherein a penetration depth of the trench is within the range of 4 μ

m to 8 μ

m.

7. An insulated gate semiconductor component comprising:

a first semiconductor region comprising drift region, of a first conductivity type;

a second semiconductor region comprising body region of a second conductivity type, formed on or in an upper main surface of the first semiconductor region;

a third semiconductor region comprising an emitter region of the first conductivity type formed selectively in a front surface of the second semiconductor region;

a trench having an opening in the front surface of the third semiconductor region and extending into a depth from the opening into the second semiconductor region;

a dielectric layer provided in the trench and completely covers a bottom thereof and extends to a location higher than an upper main surface of the first semiconductor region; and

a fourth semiconductor region of the first conductivity type in direct contact with the first and second semiconductor regions, wherein the fourth semiconductor region is arranged at a distance from the trench.

8. The semiconductor component as claimed in claim 7, comprising wherein the second semiconductor region has a contact layer more heavily doped with the dopants of the second conductivity type than the second semiconductor region.

9. The semiconductor component as claimed in claim 7, comprising wherein the distance between the trench and the fourth semiconductor region is within the range of 10-200 nm.

10. The semiconductor component as claimed in claim 9, comprising wherein the distance between the trench and the fourth semiconductor region is within the range of 50-150 nm.

11. The semiconductor component as claimed in claim 9, comprising wherein the distance between the trench and the fourth semiconductor region is within the range of 100-120 nm.

12. The semiconductor component as claimed in claim 7, comprising wherein a penetration depth of the fourth semiconductor region does not exceed twice a penetration depth of the trench.

13. The semiconductor component as claimed in claim 7, comprising wherein a penetration depth of the trench is within the range of 4 μ

m to 8 μ

m.

14. The semiconductor component as claimed in claim 13, comprising wherein a penetration depth of the fourth semiconductor region is within the range of 3 μ

m to 16 μ

m.

15. The semiconductor component as claimed in claim 14, comprising wherein a penetration depth of the fourth semiconductor region is within the range of 3 μ

m to 10 μ

m.

16. The semiconductor component as claimed in claim 7, comprising wherein the fourth semiconductor region is doped with a dose that is lower than the breakdown charge.

17. The semiconductor component as claimed in claim 7, comprising wherein the fourth semiconductor region (18) is doped with a dose that is 1-70% of the breakdown charge.

18. The semiconductor component as claimed in claim 7, comprising wherein the dopant dose of the fourth semiconductor region is within the range of 1×

10¹¹ cm<sup>−

2</sup> to 1×

10¹² cm<sup>−

2</sup>.

19. The semiconductor component as claimed in claim 7, comprising wherein a layer of the first conductivity type is arranged as a field stop layer below the first semiconductor region of a first conductivity type, said layer being more highly doped than the first semiconductor region.

20. The semiconductor component as claimed in claim 19, comprising wherein the field stop layer has a doping within the range of 1×

10¹⁴ to 5×

10¹⁴ charge carriers cm<sup>−

3</sup>.

21. The semiconductor component as claimed in claim 7, comprising wherein a layer of the second conductivity type is arranged as a collector layer, at a lower main area of the semiconductor component.

22. The semiconductor component as claimed in claim 7, comprising wherein the edge structure has a high blocking capability.

23. The semiconductor component as claimed in claim 7, comprising wherein the edge structure is a VLD structure.

24. The semiconductor component as claimed in claim 7, comprising wherein a charge carrier lifetime is reduced in the edge region by a recombination zone formed by a masked electron irradiation.

25. The semiconductor component as claimed in claim 24, comprising wherein, in a vertical direction of the component, the charge carrier lifetime is reduced in a p-type emitter layer or shortly before the latter, but in total over not more than ⅕

of the vertical component extent.

26. The semiconductor component as claimed in claim 25, comprising wherein the charge carrier lifetime is limited in regions below the edge which extend up to a maximum of five ambipolar diffusion lengths from the edge into the cell array.

27. The semiconductor component as claimed in claim 26, comprising wherein the charge carrier lifetime is limited by proton or helium irradiation.

28. The semiconductor component as claimed in claim 7, comprising wherein the chip rear side is treated by a proton or helium irradiation prior to the production of the rear side emitter.

29. The semiconductor component as claimed in claim 24, comprising wherein the collector layer is not present in the edge region.

30. A method for producing a semiconductor component comprising:

making the semiconductor component having a drift region, of a first conductivity type, a body region of a second conductivity type, a trench extending into the body region, and a semiconductor region of the first conductivity type which is in contact with the drift region and the body region and is arranged at a distance from the trench.

introducing the semiconductor region of the first conductivity type below the body region of the second conductivity type using ion implantation through a contact hole for making contact with the body region.

31. The method as claimed in claim 30, comprising carrying out the ion implantation using phosphorus or arsenic ions.

32. The method as claimed in claim 31, comprising carrying out the ion implantation using phosphorus ions.

33. The method as claimed in claim 30, comprising carrying out the ion implantation until the semiconductor region attains a dopant dose which is 1-70% of the breakdown charge.

34. A semiconductor component comprising:

a drift region, of a first conductivity type;

a body region, of a second conductivity type,

a trench extending into the body region; and

means for providing a semiconductor region of the first conductivity type which is in contact with the drift region and the body region and is arranged at a distance from the trench.