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Semiconductor component and method

  • US 20070152268A1
  • Filed: 11/28/2006
  • Published: 07/05/2007
  • Est. Priority Date: 11/28/2005
  • Status: Active Grant
First Claim
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1. A semiconductor component comprising:

  • a drift region of a first conductivity type;

    a body region of a second conductivity type, a trench extending into the body region; and

    a semiconductor region of the first conductivity type which is in contact with the drift region and the body region and is arranged at a distance from the trench.

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